<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T23:31:28Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/111703" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/111703</identifier><datestamp>2022-01-13T07:54:05Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Tonio Buonassisi and Ian Marius Peters.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Oviedo Perhavec, Juan Felipe</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Department of Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Mechanical Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2017-10-04T15:04:32Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2017-10-04T15:04:32Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2017</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2017</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/111703</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">1003855921</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2017.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (pages 75-82).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Two-terminal multijunction solar cells are a promising technology to surpass the energy-conversion efficiency of commercial single junction devices. Multijunction solar cells that integrate silicon bottom subcells could allow cost-effective efficiency enhancements and further growth in the worldwide installed photovoltaic capacity. However, the fabrication and characterization of multijunction devices is more complex than the standard single junction case, due to optical, electrical and architecture constraints. In this context, this thesis proposes and tests methods for fabrication and characterization of two-terminal multijunction devices, with special emphasis in the bottom silicon subcells. A low-capex, local area back-surface field, silicon cell is adapted for operation in a two-terminal perovskite-silicon tandem device. A contactless voltage loss analysis methodology is developed, and used to optimize the tunnel junction of the device. Finally, a general methodology to identify the shunted cells in two-terminal tandem devices is developed and validated in GaAs/GaAs tandem device. These characterization methodologies allow an adequate diagnosis of quality issues in multijunction solar cells, and provide useful tools for future efficiency improvements.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Juan Felipe Oviedo Perhavec.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">82 pages</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Silicon bottom subcell fabrication, loss analysis and shunt identification for two-terminal multijunction solar cells</dim:field>
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   	&lt;Title>Silicon bottom subcell fabrication, loss analysis and shunt identification for two-terminal multijunction solar cells&lt;/Title>
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   	&lt;PublicationDate>2017&lt;/PublicationDate>
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        	&lt;DisplayName>Oviedo Perhavec, Juan Felipe&lt;/DisplayName>
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    &lt;Keyword>Mechanical Engineering.&lt;/Keyword>
   	&lt;Abstract>Two-terminal multijunction solar cells are a promising technology to surpass the energy-conversion efficiency of commercial single junction devices. Multijunction solar cells that integrate silicon bottom subcells could allow cost-effective efficiency enhancements and further growth in the worldwide installed photovoltaic capacity. However, the fabrication and characterization of multijunction devices is more complex than the standard single junction case, due to optical, electrical and architecture constraints. In this context, this thesis proposes and tests methods for fabrication and characterization of two-terminal multijunction devices, with special emphasis in the bottom silicon subcells. A low-capex, local area back-surface field, silicon cell is adapted for operation in a two-terminal perovskite-silicon tandem device. A contactless voltage loss analysis methodology is developed, and used to optimize the tunnel junction of the device. Finally, a general methodology to identify the shunted cells in two-terminal tandem devices is developed and validated in GaAs/GaAs tandem device. These characterization methodologies allow an adequate diagnosis of quality issues in multijunction solar cells, and provide useful tools for future efficiency improvements.&lt;/Abstract>
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