2026-09-20T19:02:23Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1120032022-01-13T07:54:01Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Jing Kong.
Shen, Pin-Chun
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2017-10-30T15:03:55Z
2017-10-30T15:03:55Z
2017
2017
http://hdl.handle.net/1721.1/112003
1006507317
Thesis: S.M., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 54-55).
Two-dimensional semiconducting materials such as MoS₂ and WS₂ have been attractive for use in ultra-scaled electronic and optoelectronic devices because of their atomically-thin thickness, direct band gap, and lack of dangling bonds. Methods for large-area growth of 2D semiconducting materials are needed to bring them to practical applications. This thesis aims to develop reliable methods for growing high-quality monolayer MoS₂ and WS₂ by CVD and explore their intrinsic electrical transport properties for electronic and optoelectronic device applications. The as-grown monolayer MoS₂ and WS₂ exhibit n-type semiconducting behavior with excellent optical properties. Various techniques are employed to characterize the CVD-grown materials, including photoluminescence, UV-visible absorption, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. Moreover, the electronic transport characteristics of single-layer CVD-grown MoS₂ and WS₂ field-effect transistors with a back-gated configuration are demonstrated.
by Pin-Chun Shen.
S.M.
55 pages
eng
Massachusetts Institute of Technology
MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Large-area CVD growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors
Large-area chemical vapor deposition growth of two-dimensional transition metal dichalcogenides and monolayer MoS₂ and WS₂ metal-oxide-semiconductor field-effect transistors
Thesis
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<Abstract>Two-dimensional semiconducting materials such as MoS₂ and WS₂ have been attractive for use in ultra-scaled electronic and optoelectronic devices because of their atomically-thin thickness, direct band gap, and lack of dangling bonds. Methods for large-area growth of 2D semiconducting materials are needed to bring them to practical applications. This thesis aims to develop reliable methods for growing high-quality monolayer MoS₂ and WS₂ by CVD and explore their intrinsic electrical transport properties for electronic and optoelectronic device applications. The as-grown monolayer MoS₂ and WS₂ exhibit n-type semiconducting behavior with excellent optical properties. Various techniques are employed to characterize the CVD-grown materials, including photoluminescence, UV-visible absorption, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. Moreover, the electronic transport characteristics of single-layer CVD-grown MoS₂ and WS₂ field-effect transistors with a back-gated configuration are demonstrated.</Abstract>
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