2026-09-20T18:46:51Zhttps://dspace.mit.edu/server/oai/request

oai:dspace.mit.edu:1721.1/1131162026-06-06T00:48:45Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023

Tomás Palacios. Radway, Robert M Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2018-01-12T20:57:02Z 2018-01-12T20:57:02Z 2017 2017 http://hdl.handle.net/1721.1/113116 1016449984 Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 101-109). Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields. by Robert M. Radway. M.Eng. 109 pages eng Massachusetts Institute of Technology MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Near junction thermal management of GaN HEMTs via wafer bonding Near junction thermal management of Gallium nitride high electron mobility transistors via wafer bonding Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="0fdbc017-291d-44d2-9c4d-0ff4b32dcaf1"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Near junction thermal management of GaN HEMTs via wafer bonding</Title> <Subtitle>Near junction thermal management of Gallium nitride high electron mobility transistors via wafer bonding</Subtitle> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2017</PublicationDate> <Authors> <Author> <DisplayName>Radway, Robert M</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) offer excellent performance in power conversion and high frequency power amplification. However, device self-heating limits reliable output power to 1/8th of reported maximums. Device-level thermal management is therefore critical for reliable high power operation. This thesis proposes and examines wafer bonded GaN-on-SiC HEMTs as a thermally efficient alternative to growth structures. This work first compares the thermal properties of this novel structure to the state-of-the-art. It then develops suitable wafer bonding techniques to fabricate this structure. In addition, the bonded interface thermal conductivity is measured via time domain thermoreflectance. The results of these measurements are analyzed to determine the thermal performance of the structure. In all, this thesis shows that the proposed bonded technology is a promising method for the fabrication of the next generation of GaN HEMTs. These devices are expected to perform at a level equivalent to GaN-on-diamond devices, although further process development is needed to achieve high bonding yields.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>