2026-09-21T14:13:17Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1134392026-06-06T00:49:23Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Ruonan Han.
Williams, David Elliott
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2018-02-08T15:57:47Z
2018-02-08T15:57:47Z
2016
2016
http://hdl.handle.net/1721.1/113439
1020069121
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 129-131).
The viability of using CMOS schottky diodes in avalanche breakdown to generate noise power at THz frequencies was evaluated. Two sets of test diodes manufactured in TSMC's 65nm CMOS process were characterized in order to determine the optimal diode design for generating noise power. Measurements show that shallow trench insulation separated (STI) schottky diodes have nearly ideal breakdown characteristics while polysilicon gate separated (PGS) schottky diodes have poor breakdown performance due to the premature breakdown of fringe fields. Then two antenna arrays theoretically capable of radiating THz noise were designed using STI diodes. While measurements showed that these diodes are capable of generating up to 30 dB of additional noise power at low frequencies, no noise power was detected at THz frequencies in three separate measurement attempts. This work concludes with recommendations for future work to conclusively determine the viability of this approach.
by David Elliott Williams.
M.Eng.
131 pages
eng
Massachusetts Institute of Technology
MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Generation of noise power at THz frequencies using CMOS schottky diodes in avalanche breakdown
Thesis
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<Abstract>The viability of using CMOS schottky diodes in avalanche breakdown to generate noise power at THz frequencies was evaluated. Two sets of test diodes manufactured in TSMC's 65nm CMOS process were characterized in order to determine the optimal diode design for generating noise power. Measurements show that shallow trench insulation separated (STI) schottky diodes have nearly ideal breakdown characteristics while polysilicon gate separated (PGS) schottky diodes have poor breakdown performance due to the premature breakdown of fringe fields. Then two antenna arrays theoretically capable of radiating THz noise were designed using STI diodes. While measurements showed that these diodes are capable of generating up to 30 dB of additional noise power at low frequencies, no noise power was detected at THz frequencies in three separate measurement attempts. This work concludes with recommendations for future work to conclusively determine the viability of this approach.</Abstract>
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