2026-09-20T01:21:01Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1140892022-01-13T07:55:22Zcom_1721.1_7582com_1721.1_7581col_1721.1_131024
August F. Witt.
Lee, Grace W. (Grace Wang)
Massachusetts Institute of Technology. Department of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2018-03-12T19:29:25Z
2018-03-12T19:29:25Z
2001
2001
http://hdl.handle.net/1721.1/114089
1027217097
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001.
Cataloged from PDF version of thesis.
Includes bibliographical references (page 23).
The purpose of this work is to characterize the optical absorption in bismuth silicon oxide (Bi₁₂SiO₂₀) crystals grown using the Bridgman technique and to identify electronic transitions responsible for absorption. Optical measurements were taken in the range of 0.4 - 11 pm at 300 K and 77 K using a spectrometer. The results show that near the band edge, there is evidence of indirect transitions at 2.3 eV and excition transitions at 1.8 eV. Low temperature measurements revealed peaks of free carrier absorption in the visible light range at 1.7 eV and 2.1 eV. Illuminated samples at low temperature revealed empty donor levels in the visible range at 1.6-1.9 eV and 2.1 eV, indicating the presence of the photochromic effect and photorefractivity.
by Grace W. Lee.
S.B.
23 pages
eng
Massachusetts Institute of Technology
MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission.
http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="3be00f40-e16f-45d7-8d7d-e8de2037343e">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Optical absorption of bismuth silicon oxide (Bi₁₂SiO₂₀) crystals</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2001</PublicationDate>
<Authors>
<Author>
<DisplayName>Lee, Grace W. (Grace Wang)</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Materials Science and Engineering.</Keyword>
<Abstract>The purpose of this work is to characterize the optical absorption in bismuth silicon oxide (Bi₁₂SiO₂₀) crystals grown using the Bridgman technique and to identify electronic transitions responsible for absorption. Optical measurements were taken in the range of 0.4 - 11 pm at 300 K and 77 K using a spectrometer. The results show that near the band edge, there is evidence of indirect transitions at 2.3 eV and excition transitions at 1.8 eV. Low temperature measurements revealed peaks of free carrier absorption in the visible light range at 1.7 eV and 2.1 eV. Illuminated samples at low temperature revealed empty donor levels in the visible range at 1.6-1.9 eV and 2.1 eV, indicating the presence of the photochromic effect and photorefractivity.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>