2026-09-21T12:18:35Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/114142022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Dimitri Antoniadis
Jacobs, Jarvis Benjamin
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2005-08-17T18:20:10Z
2005-08-17T18:20:10Z
1995
1995
http://hdl.handle.net/1721.1/11414
33227898
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
Includes bibliographical references (p. 216).
by Jarvis B. Jacobs.
Ph.D.
216 p.
11272228 bytes
11271983 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science
Modeling of electron transport in sub-100 nm channel length silicon MOSFETs
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