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Jesús A. del Alamo. Lednev, Alexander I.(Alexander Igorevich) Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2019-07-15T20:29:17Z 2019-07-15T20:29:17Z 2018 2018 https://hdl.handle.net/1721.1/121628 1098173887 This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2018 Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 83-84). Power electronics is expanding as we automate and electrify our households and step into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications because they combine high electron mobility with low gate leakage, increasing efficiency. This comes with the tradeoff of increased reliability concerns to be addressed before the widespread commercialization of GaN MIS-HEMTs. This thesis investigates one failure mechanism found in prototype industrial GaN MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN MIS-HEMTs because of their role as switches in high voltage circuits. In this work, we develop testing methodologies to address reticle-to-reticle variations and we estimate the lifetime of novel GaN MIS-HEMTs by performing measurements at different stress levels and temperatures in the ON and OFF-states. by Alexander I. Lednev. M.Eng. M.Eng. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science 84 pages eng Massachusetts Institute of Technology MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors Thesis application/pdf 2019-07-15T20:29:13Z Publication Master EECS unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="912b6b58-86fc-4a75-ae39-392d95207c81"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2018</PublicationDate> <Authors> <Author> <DisplayName>Lednev, Alexander I.(Alexander Igorevich)</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Power electronics is expanding as we automate and electrify our households and step into mainstream electric vehicles. Recently, GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have been increasing in popularity for high voltage power electronics applications because they combine high electron mobility with low gate leakage, increasing efficiency. This comes with the tradeoff of increased reliability concerns to be addressed before the widespread commercialization of GaN MIS-HEMTs. This thesis investigates one failure mechanism found in prototype industrial GaN MIS-HEMTs: time dependent dielectric breakdown (TDDB) of the gate insulator. TDDB occurs when a high electric field causes an accumulation of defects in the gate dielectric, forming a conducting path and rendering the device unusable. This is of major concern in GaN MIS-HEMTs because of their role as switches in high voltage circuits. In this work, we develop testing methodologies to address reticle-to-reticle variations and we estimate the lifetime of novel GaN MIS-HEMTs by performing measurements at different stress levels and temperatures in the ON and OFF-states.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>