2026-09-20T02:34:46Zhttps://dspace.mit.edu/server/oai/request

oai:dspace.mit.edu:1721.1/1242592026-06-06T00:49:03Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023

Tomás Palacios. Muñoz, Ayrton D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2020-03-24T15:36:48Z 2020-03-24T15:36:48Z 2019 2019 https://hdl.handle.net/1721.1/124259 1145124801 This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2019 Cataloged from student-submitted PDF version of thesis. Includes bibliographical references (pages 88-92). Gallium nitride (GaN) is a promising material for power electronics due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as in conventional materials. This thesis covers three aspects of vertical power devices on bulk GaN to increase their reliability and performance. The first is the breakdown behavior of GaN under high electric fields. Vertical Schottky diodes with multi-finger anodes are simulated, fabricated and characterized. Evidence of impact ionization and signs of avalanche breakdown are shown. The second aspect is scalable fabrication technologies for vertical power FinFETs. Key processing stesps are refined and demonstrated on large-area devices. The final topic covered is GaN superjunction (SJ) technology in the context vertical power FinFETs. The SJ FinFET concept is first introduced then an underutilized method for p-type doping GaN is explored as an alternative to conventional p-type regrowth and ion implantation. Finally, the proposed GaN SJ FinFET is investigated with simulations. Various standard SJ parameters are optimized and a novel electric field management technique is proposed. by Ayrton D. Muñoz. M.Eng. M.Eng. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science 92 pages eng Massachusetts Institute of Technology MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Development of vertical bulk gallium nitride power devices Thesis application/pdf 2020-03-24T15:36:47Z Publication Master EECS unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="2611b5ab-6fb3-4b4f-b78e-0ad088d20044"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Development of vertical bulk gallium nitride power devices</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2019</PublicationDate> <Authors> <Author> <DisplayName>Muñoz, Ayrton D.</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Gallium nitride (GaN) is a promising material for power electronics due to its outstanding properties, such as high critical electric field and large bandgap. Despite its superior intrinsic properties, fabrication processes and technology for vertical GaN power electronics is still not as mature as in conventional materials. This thesis covers three aspects of vertical power devices on bulk GaN to increase their reliability and performance. The first is the breakdown behavior of GaN under high electric fields. Vertical Schottky diodes with multi-finger anodes are simulated, fabricated and characterized. Evidence of impact ionization and signs of avalanche breakdown are shown. The second aspect is scalable fabrication technologies for vertical power FinFETs. Key processing stesps are refined and demonstrated on large-area devices. The final topic covered is GaN superjunction (SJ) technology in the context vertical power FinFETs. The SJ FinFET concept is first introduced then an underutilized method for p-type doping GaN is explored as an alternative to conventional p-type regrowth and ion implantation. Finally, the proposed GaN SJ FinFET is investigated with simulations. Various standard SJ parameters are optimized and a novel electric field management technique is proposed.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>