2026-09-20T00:34:57Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1400042022-02-08T03:23:41Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Palacios, Tomás
Zhu, Jiadi
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2022-02-07T15:18:26Z
2022-02-07T15:18:26Z
2021-09
2021-09-21T19:54:19.676Z
https://hdl.handle.net/1721.1/140004
https://orcid.org/0000-0001-7319-3913
Among all the possible back-end-of-line (BEOL) solutions to improve the integration density and functionality of conventional silicon circuits, two-dimensional (2D) material devices are believed to be very promising, due to their high mobility, relatively large band gaps, atom-level thickness, performance comparable to the one of silicon devices, and great potential in realizing 3D integration. However, wafer-scale growth of high-quality, continuous 2D materials thin film with BEOL compatible temperature (<400°C) and good uniformity has always been difficult to realize. To achieve low contact resistance to these materials is also very challenging and hinders the development of 2D material devices and circuits.
In this thesis, we will demonstrate a novel 8-inch, BEOL-compatible metal organic chemical vapor deposition (MOCVD) method for the synthesis of 2D transition metal dichalcogenide materials with growth temperature lower than 400°C. Highly-scaled high-performance MoS₂ transistors will also be investigated with different contact engineering methods. These findings represent crucial steps for high performance power electronic circuits as well as realizing ultra-large scale BEOL integration with silicon circuits.
S.M.
Massachusetts Institute of Technology
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High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
Thesis
application/pdf
Master
Master of Science in Electrical Engineering and Computer Science
Publication
unknown
unknown
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<Abstract>Among all the possible back-end-of-line (BEOL) solutions to improve the integration density and functionality of conventional silicon circuits, two-dimensional (2D) material devices are believed to be very promising, due to their high mobility, relatively large band gaps, atom-level thickness, performance comparable to the one of silicon devices, and great potential in realizing 3D integration. However, wafer-scale growth of high-quality, continuous 2D materials thin film with BEOL compatible temperature (<400°C) and good uniformity has always been difficult to realize. To achieve low contact resistance to these materials is also very challenging and hinders the development of 2D material devices and circuits.
In this thesis, we will demonstrate a novel 8-inch, BEOL-compatible metal organic chemical vapor deposition (MOCVD) method for the synthesis of 2D transition metal dichalcogenide materials with growth temperature lower than 400°C. Highly-scaled high-performance MoS₂ transistors will also be investigated with different contact engineering methods. These findings represent crucial steps for high performance power electronic circuits as well as realizing ultra-large scale BEOL integration with silicon circuits.</Abstract>
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