2026-09-19T08:04:34Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1432612022-06-16T03:27:42Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Englund, Dirk R.
Sutula, Madison M.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2022-06-15T13:07:59Z
2022-06-15T13:07:59Z
2022-02
2022-03-04T20:59:50.370Z
https://hdl.handle.net/1721.1/143261
https://orcid.org/0000-0001-9676-5611
Solid state quantum memories, such as color centers in diamond, are a leading platform for the distribution of quantum information. Quantum repeaters will require many qubit registers at every quantum network node, each with long-lived spin states and high-quality single photon emissions. Here, we present techniques for large-scale characterization of color centers in diamond. We first demonstrate automated confocal microscopy and apply it to characterize silicon vacancies in diamond overgrown via chemical vapor deposition and tin vacancies in overgrown and high pressure high temperature treated diamond, yielding narrow inhomogeneous distributions of both emitters. We then demonstrate widefield photoluminescence excitation microscopy as a tool to multiplex the characterization of color center optical properties, and apply it to measure the optical properties of silicon vacancies in a sample implanted with a focused ion beam. These techniques pave the way for future large-scale characterization efforts necessary to construct quantum memory nodes.
S.M.
Massachusetts Institute of Technology
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http://rightsstatements.org/page/InC-EDU/1.0/
Large-Scale Characterization of Quantum Emitters in High-Purity Diamond
Thesis
application/pdf
Master
Master of Science in Electrical Engineering and Computer Science
Publication
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unknown
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<Abstract>Solid state quantum memories, such as color centers in diamond, are a leading platform for the distribution of quantum information. Quantum repeaters will require many qubit registers at every quantum network node, each with long-lived spin states and high-quality single photon emissions. Here, we present techniques for large-scale characterization of color centers in diamond. We first demonstrate automated confocal microscopy and apply it to characterize silicon vacancies in diamond overgrown via chemical vapor deposition and tin vacancies in overgrown and high pressure high temperature treated diamond, yielding narrow inhomogeneous distributions of both emitters. We then demonstrate widefield photoluminescence excitation microscopy as a tool to multiplex the characterization of color center optical properties, and apply it to measure the optical properties of silicon vacancies in a sample implanted with a focused ion beam. These techniques pave the way for future large-scale characterization efforts necessary to construct quantum memory nodes.</Abstract>
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