<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-18T21:44:34Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/143373" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/143373</identifier><datestamp>2022-06-16T03:13:38Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131022</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor">Shulaker, Max M.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author">Lau, Christian Lee</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2022-06-15T13:16:12Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2022-06-15T13:16:12Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued">2022-02</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="submitted">2022-03-04T20:47:43.395Z</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">https://hdl.handle.net/1721.1/143373</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract">Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated systems. In this thesis, I overcome these defects and variations to enable, for the first time, a demonstration of a beyond-silicon modern microprocessor: RV16XNANO, designed and fabricated entirely using CNFETs. RV16X-NANO is a 16-bit microprocessor based on the open-source and commercially available RISC-V instruction set processor, running standard RISC-V 32-bit instructions on 16-bit data and addresses. It integrates >14,000 CMOS CNFETs, and operates as modern microprocessors do today (for example, it can run compiled programs; in addition, we demonstrate its functionality by executing all types and formats of instructions in the RISC-V instruction-set architecture). This is made possible by the manufacturing methodology for CNTs (MMC)—a set of original processing and circuit design techniques that are combined to overcome the intrinsic CNT challenges.&#xd;
&#xd;
Importantly, the entire MMC and all of the work in this thesis are wafer-scale, VLSI-compatible and is seamlessly integrated within existing infrastructures for silicon CMOS—both in terms of design and of processing. Together, the contributions of this thesis establish a robust CNT CMOS technology and represent a major milestone in the development of beyond-silicon electronics.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree">Ph.D.</dim:field>
   <dim:field mdschema="dc" element="publisher">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights">In Copyright - Educational Use Permitted</dim:field>
   <dim:field mdschema="dc" element="rights">Copyright MIT</dim:field>
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   <dim:field mdschema="dc" element="title">A Manufacturing Methodology for Carbon Nanotube-based Digital Systems: from Devices, to Doping, to System Demonstrations</dim:field>
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   	&lt;Title>A Manufacturing Methodology for Carbon Nanotube-based Digital Systems: from Devices, to Doping, to System Demonstrations&lt;/Title>
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   	&lt;PublicationDate>2022-02&lt;/PublicationDate>
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        	&lt;DisplayName>Lau, Christian Lee&lt;/DisplayName>
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   	&lt;Abstract>Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated systems. In this thesis, I overcome these defects and variations to enable, for the first time, a demonstration of a beyond-silicon modern microprocessor: RV16XNANO, designed and fabricated entirely using CNFETs. RV16X-NANO is a 16-bit microprocessor based on the open-source and commercially available RISC-V instruction set processor, running standard RISC-V 32-bit instructions on 16-bit data and addresses. It integrates &amp;gt;14,000 CMOS CNFETs, and operates as modern microprocessors do today (for example, it can run compiled programs; in addition, we demonstrate its functionality by executing all types and formats of instructions in the RISC-V instruction-set architecture). This is made possible by the manufacturing methodology for CNTs (MMC)—a set of original processing and circuit design techniques that are combined to overcome the intrinsic CNT challenges.&#xd;
&#xd;
Importantly, the entire MMC and all of the work in this thesis are wafer-scale, VLSI-compatible and is seamlessly integrated within existing infrastructures for silicon CMOS—both in terms of design and of processing. Together, the contributions of this thesis establish a robust CNT CMOS technology and represent a major milestone in the development of beyond-silicon electronics.&lt;/Abstract>
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