2026-09-20T08:19:05Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/1501072023-04-01T03:01:02Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Liu, Luqiao
Zhang, Pengxiang
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2023-03-31T14:32:47Z
2023-03-31T14:32:47Z
2023-02
2023-02-28T14:39:20.647Z
https://hdl.handle.net/1721.1/150107
https://orcid.org/0000-0003-4171-9866
Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.
In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.
These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.
Ph.D.
Massachusetts Institute of Technology
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http://rightsstatements.org/page/InC-EDU/1.0/
Current-induced Dynamics of Easy-Plane Antiferromagnets
Thesis
application/pdf
Doctoral
Doctor of Philosophy
Publication
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unknown
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<Abstract>Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.
In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.
These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.</Abstract>
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