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   <dim:field mdschema="dc" element="contributor" qualifier="advisor">Englund, Dirk</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author">Christen, Ian</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
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   <dim:field mdschema="dc" element="description" qualifier="abstract">Color centers in diamond have emerged as leading atom-like quantum systems for applications spanning from quantum repeaters to sensors. However, the optical and spin properties of engineered diamond color centers are limited by crystal damage produced during ion implantation, crystal irradiation, and annealing. In this thesis, we develop advanced material processing methods and characterization techniques to address critical challenges in the formation of high-performance diamond color centers to advance towards the efficient creation of desired dopant-vacancy centers with minimal formation of deleterious multi-vacancy clusters.</dim:field>
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   <dim:field mdschema="dc" element="title">Annealing Techniques for Color Center Formation</dim:field>
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   	&lt;Title>Annealing Techniques for Color Center Formation&lt;/Title>
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   	&lt;PublicationDate>2025-02&lt;/PublicationDate>
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   	&lt;Abstract>Color centers in diamond have emerged as leading atom-like quantum systems for applications spanning from quantum repeaters to sensors. However, the optical and spin properties of engineered diamond color centers are limited by crystal damage produced during ion implantation, crystal irradiation, and annealing. In this thesis, we develop advanced material processing methods and characterization techniques to address critical challenges in the formation of high-performance diamond color centers to advance towards the efficient creation of desired dopant-vacancy centers with minimal formation of deleterious multi-vacancy clusters.&lt;/Abstract>
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