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oai:dspace.mit.edu:1721.1/1648442026-02-13T03:49:21Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023

Kimerling, Lionel C. Zhang, Erin Wei Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2026-02-12T17:14:08Z 2026-02-12T17:14:08Z 2025-09 2025-09-15T14:56:28.683Z https://hdl.handle.net/1721.1/164844 Waveguide integrated devices that operate in the mid-infrared (mid-IR) wavelength range (2.5-12 µm) are used for sensing the fundamental absorption bands in a variety of molecules. Germanium (Ge) is commonly used for photodetection in the nearinfrared (near-IR) wavelength range of 1.2-1.6 µm due to its strong absorption from a 0.8 eV direct band gap. At longer wavelengths in the mid-IR range, Ge exhibits transparency that makes it a desirable waveguide material for sensing applications. Its epitaxial growth compatibility with silicon (Si) substrates makes Ge-on-Si an effective platform for mid-IR waveguides. For back-end-of-line (BEOL) integration of waveguides in sensing applications, the thermal budget limits the temperature to below 450°C. In this work, we investigated the use of h-line exposure as a commercially viable, low-cost option for patterning low temperature (LT) Ge-on-Si waveguides using direct write lithography. Waveguide dimensions for optimal confinement in single-mode transverse electric (TE) polarization at wavelengths of 3 µm and 10.4- 11.3 µm were modeled and the direct lithography process was refined. Through dose testing and adjustments to the raster direction and pixel resolution, it was found that direct write lithography lacked the resolution required for low-loss waveguides. Scanning electron microscopy (SEM) revealed inconsistent waveguide widths and sidewall roughness, and e-beam lithography was identified as the preferred lithography process. For future integration of LT-Ge in a foundry process design kit (PDK), a universal thickness of 1.7 µm was found to support single-mode waveguide operation from 3-11.3 µm wavelength. M.Eng. Massachusetts Institute of Technology In Copyright - Educational Use Permitted Copyright retained by author(s) https://rightsstatements.org/page/InC-EDU/1.0/ Low-Temperature Germanium Waveguides for Mid-Infrared Sensing Applications Thesis application/pdf Master Master of Engineering in Electrical Engineering and Computer Science Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="21a24aed-b32a-4429-ba22-3faae524be6e"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Title>Low-Temperature Germanium Waveguides for Mid-Infrared Sensing Applications</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2025-09</PublicationDate> <Authors> <Author> <DisplayName>Zhang, Erin Wei</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>https://rightsstatements.org/page/InC-EDU/1.0/</License> <Abstract>Waveguide integrated devices that operate in the mid-infrared (mid-IR) wavelength range (2.5-12 µm) are used for sensing the fundamental absorption bands in a variety of molecules. Germanium (Ge) is commonly used for photodetection in the nearinfrared (near-IR) wavelength range of 1.2-1.6 µm due to its strong absorption from a 0.8 eV direct band gap. At longer wavelengths in the mid-IR range, Ge exhibits transparency that makes it a desirable waveguide material for sensing applications. Its epitaxial growth compatibility with silicon (Si) substrates makes Ge-on-Si an effective platform for mid-IR waveguides. For back-end-of-line (BEOL) integration of waveguides in sensing applications, the thermal budget limits the temperature to below 450°C. In this work, we investigated the use of h-line exposure as a commercially viable, low-cost option for patterning low temperature (LT) Ge-on-Si waveguides using direct write lithography. Waveguide dimensions for optimal confinement in single-mode transverse electric (TE) polarization at wavelengths of 3 µm and 10.4- 11.3 µm were modeled and the direct lithography process was refined. Through dose testing and adjustments to the raster direction and pixel resolution, it was found that direct write lithography lacked the resolution required for low-loss waveguides. Scanning electron microscopy (SEM) revealed inconsistent waveguide widths and sidewall roughness, and e-beam lithography was identified as the preferred lithography process. For future integration of LT-Ge in a foundry process design kit (PDK), a universal thickness of 1.7 µm was found to support single-mode waveguide operation from 3-11.3 µm wavelength.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>