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Karen K. Gleason. Lau, Kenneth Ka Shun, 1972- Massachusetts Institute of Technology. Dept. of Chemical Engineering. Massachusetts Institute of Technology. Department of Chemical Engineering 2005-05-19T14:27:20Z 2005-05-19T14:27:20Z 2000 2000 http://hdl.handle.net/1721.1/16748 47350781 Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000. Includes bibliographical references. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node. by Kenneth Ka Shun Lau. Ph.D. 230 leaves 9163868 bytes 9163575 bytes application/pdf application/pdf eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Chemical Engineering. Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="164da54c-4ba4-4339-8b3c-f91f67b6831a"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2000</PublicationDate> <Authors> <Author> <DisplayName>Lau, Kenneth Ka Shun, 1972-</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Chemical Engineering.</Keyword> <Abstract>Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>