<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T01:26:13Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/16787" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/16787</identifier><datestamp>2026-06-03T16:34:01Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131022</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Duane S. Boning.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Gower, Aaron E. (Aaron Elwood)</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2005-05-19T14:35:26Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2005-05-19T14:35:26Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2001</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2001</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/16787</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">49839530</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Also available online at the MIT Theses Online homepage &lt;http://thesis.mit.edu/></dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 241-247).</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">This electronic version was submitted by the student author.  The certified thesis is available in the Institute Archives and Special Collections.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under the pressure of economic forces and product performance requirements. This thesis addresses these issues and describes the concept of an "Equipment Cell," which integrates sensors and data processing software around an individual piece of semiconductor equipment. Distributed object technology based on open standards is specified and utilized for software modules that analyze and improve semiconductor equipment processing capabilities. A testbed system for integrated, model-based, run-to-run control of epitaxial silicon (epi) film deposition is developed, incorporating a cluster tool with a single-wafer epi deposition chamber, an in-line epi film thickness measurement tool, and off-line thickness and resistivity measurement systems. Automated single-input-single-output, run-to-run control of epi thickness is first demonstrated. An advanced, multi-objective controller is then developed (using distributed object technology) to provide simultaneous epi thickness control on a run-to-run basis using the in-line sensor, as well as combined thickness and resistivity uniformity control on a lot-to-lot basis using off-line thickness and resistivity sensors.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">(cont.) Control strategies are introduced for performing combined run-to-run and lot-to-lot control, based on the availability of measurements. Also discussed are issues involved with using multiple site measurements of multiple film characteristics, as well as the use of time-based inputs and rate-based models. Such techniques are widely applicable for many semiconductor processing steps.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Aaron Elwood Gower-Hall.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">Ph.D.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">280 p.</dim:field>
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   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Integrated model-based run-to-run uniformity control for epitaxial silicon deposition.</dim:field>
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   	&lt;Title>Integrated model-based run-to-run uniformity control for epitaxial silicon deposition.&lt;/Title>
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   	&lt;PublicationDate>2001&lt;/PublicationDate>
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        	&lt;DisplayName>Gower, Aaron E. (Aaron Elwood)&lt;/DisplayName>
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   	&lt;Abstract>Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under the pressure of economic forces and product performance requirements. This thesis addresses these issues and describes the concept of an &amp;quot;Equipment Cell,&amp;quot; which integrates sensors and data processing software around an individual piece of semiconductor equipment. Distributed object technology based on open standards is specified and utilized for software modules that analyze and improve semiconductor equipment processing capabilities. A testbed system for integrated, model-based, run-to-run control of epitaxial silicon (epi) film deposition is developed, incorporating a cluster tool with a single-wafer epi deposition chamber, an in-line epi film thickness measurement tool, and off-line thickness and resistivity measurement systems. Automated single-input-single-output, run-to-run control of epi thickness is first demonstrated. An advanced, multi-objective controller is then developed (using distributed object technology) to provide simultaneous epi thickness control on a run-to-run basis using the in-line sensor, as well as combined thickness and resistivity uniformity control on a lot-to-lot basis using off-line thickness and resistivity sensors.&lt;/Abstract>
   	&lt;Abstract>(cont.) Control strategies are introduced for performing combined run-to-run and lot-to-lot control, based on the availability of measurements. Also discussed are issues involved with using multiple site measurements of multiple film characteristics, as well as the use of time-based inputs and rate-based models. Such techniques are widely applicable for many semiconductor processing steps.&lt;/Abstract>
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