2026-09-19T06:52:05Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/176762022-01-13T07:54:33Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Lionel C. Kimerling.
Cannon, Douglas Dale, 1974-
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2005-06-02T16:39:46Z
2005-06-02T16:39:46Z
2003
2004
http://hdl.handle.net/1721.1/17676
55871834
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, February 2004.
Includes bibliographical references (p. 131-138).
The development of CMOS-compatible photodetectors capable of operating throughout the entire telecommunications wavelength spectrum will aid in the integration of photodetectors with Si microelectronics, thus offering a low cost platform for high performance photoreceivers. This thesis demonstrates the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 [mu]m wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6[mu]m. Design rules are given for high speed and high responsivity, and the advantages of waveguide integration for simultaneous achievement of high speed and high responsivity are illustrated. It is shown that waveguide integration has advantages to vertical illumination when optical saturation is considered. Optical saturation will become important as photodetector sizes shrink to the order of a few tens of microns in diameter. High Ge content SiGe could have applications for a SiGe electro-optic modulator utilizing the Franz-Keldysh effect. High Ge content SiGe films have been grown on Si substrates. The Franz-Keldysh effect has been observed in our pure Ge films as an increase in responsivity with increasing reverse bias for wavelengths longer than the bandgap energy. .
by Douglas Dale Cannon.
Ph.D.
138 p.
8098671 bytes
8116787 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
Strain-engineered CMOS-compatible Ge photodetectors
Strain-engineered complementary metal oxide semiconductor-compatible Ge photodetectors
Thesis
application/pdf
Publication
unknown
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