2026-09-19T08:29:55Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/179832022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Duane S. Boning.
Tang, Brian D. (Brian David), 1980-
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2005-06-02T19:30:25Z
2005-06-02T19:30:25Z
2004
2004
http://hdl.handle.net/1721.1/17983
57189433
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 74-75).
Heavily used in the manufacture of integrated circuits, chemical-mechanical polishing (CMP) is becoming an enabling technology for microelectromechanical systems (MEMS). To reliably use CMP in the manufacturing process, designers must be able to accurately predict the CMP process and control final surface uniformity. This thesis extends integrated circuit CMP knowledge towards MEMS applications. Experiments were performed to characterize polysilicon MEMS CMP. A new test mask was created which contains test structures relevant to MEMS. Both single and dual material polish experiments were carried out and the resulting data fit against an adapted step height density model. Results show that integrated circuit CMP models are applicable to MEMS CMP, but the models need to be adjusted in order to contend with issues inherent to MEMS CMP. Further study may be necessary to accurately and completely characterize polysilicon MEMS CMP and make improvements to the models.
by Brian D. Tang.
M.Eng.
75 p.
4544424 bytes
4552124 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Characterization and modeling of polysilicon MEMS chemical-mechanical polishing
Thesis
application/pdf
Publication
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unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="e19b5897-f24e-463a-a76b-1e29279437e9">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Characterization and modeling of polysilicon MEMS chemical-mechanical polishing</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2004</PublicationDate>
<Authors>
<Author>
<DisplayName>Tang, Brian D. (Brian David), 1980-</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>Heavily used in the manufacture of integrated circuits, chemical-mechanical polishing (CMP) is becoming an enabling technology for microelectromechanical systems (MEMS). To reliably use CMP in the manufacturing process, designers must be able to accurately predict the CMP process and control final surface uniformity. This thesis extends integrated circuit CMP knowledge towards MEMS applications. Experiments were performed to characterize polysilicon MEMS CMP. A new test mask was created which contains test structures relevant to MEMS. Both single and dual material polish experiments were carried out and the resulting data fit against an adapted step height density model. Results show that integrated circuit CMP models are applicable to MEMS CMP, but the models need to be adjusted in order to contend with issues inherent to MEMS CMP. Further study may be necessary to accurately and completely characterize polysilicon MEMS CMP and make improvements to the models.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>