2026-09-21T18:18:58Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/281202022-01-13T07:54:40Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Henry I. Smith.
Hu, Hang
Massachusetts Institute of Technology. Department of Physics
2005-09-26T18:35:12Z
2005-09-26T18:35:12Z
1994
1994
http://hdl.handle.net/1721.1/28120
32044826
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1994.
Includes bibliographical references (leaves 127-133).
by Hang Hu.
Ph.D.
133 leaves
6858547 bytes
6876015 bytes
application/pdf
application/pdf
en_US
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Physics
Experimental study of electron velocity overshoot in silicon inversion layers
Thesis
application/pdf
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="98b26a4d-11fe-44c3-a693-8d3bc72262b7">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>en_US</Language>
<Title>Experimental study of electron velocity overshoot in silicon inversion layers</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>1994</PublicationDate>
<Authors>
<Author>
<DisplayName>Hu, Hang</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Physics</Keyword>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>