2026-09-20T04:40:50Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/285562022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
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Hennessy, John, 1980-
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2005-09-27T16:59:31Z
2005-09-27T16:59:31Z
2004
2004
http://hdl.handle.net/1721.1/28556
57418313
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 53-55).
As CMOS devices continue to scale to smaller dimensions, it has become clear that new materials and structures are needed to also continue to improve performance. Germanium on insulator is proposed as it combines both a high mobility material (relative to silicon) and a structure with improved scaling characteristics compared to bulk devices. The goal of this work is to develop of procedure for the transfer of a germanium layer to bulk silicon by means of wafer bonding and hydrogen-induced layer transfer.
by John Hennessy.
S.M.
55 p.
2462794 bytes
2467410 bytes
application/pdf
application/pdf
en_US
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Germanium on insulator fabrication technology
Thesis
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