2026-09-20T13:25:54Zhttps://dspace.mit.edu/server/oai/request

oai:dspace.mit.edu:1721.1/288462026-06-10T13:46:24Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022

Karen K. Gleason. Ross, April Denise, 1977- Massachusetts Institute of Technology. Dept. of Chemical Engineering. Massachusetts Institute of Technology. Department of Chemical Engineering 2007-12-07T19:19:36Z 2007-12-07T19:19:36Z 2005 2005 http://hdl.handle.net/1721.1/28846 60388247 Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005. Includes bibliographical references. Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable film characterization tools to understand structure-property-processing fundamentals by quantifying structural bonding environments and relating those to the film properties. Nanocomposites were also produced using two novel techniques. First, crystal colloidal templates of polystyrene nanospheres were fabricated using evaporation-induced self-assembly. OSG was then deposited throughout the templates to create composite materials. Subsequently the polystyrene was removed upon thermal annealing to create highly porous OSG thin films. Second, ultrasonic atomization was used to deliver particles into a vacuum chamber during plasma-enhanced CVD of the organosilicon matrix to create composite thin films using an all-CVD technique. This process could extend CVD to applications currently only possible using wet processing techniques or multi-step processing. by April Denise Ross. Ph.D. 119 leaves eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Chemical Engineering. Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="14d4a286-d31a-4cbd-9c3d-8a1da4e64c37"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2005</PublicationDate> <Authors> <Author> <DisplayName>Ross, April Denise, 1977-</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Chemical Engineering.</Keyword> <Abstract>Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable film characterization tools to understand structure-property-processing fundamentals by quantifying structural bonding environments and relating those to the film properties. Nanocomposites were also produced using two novel techniques. First, crystal colloidal templates of polystyrene nanospheres were fabricated using evaporation-induced self-assembly. OSG was then deposited throughout the templates to create composite materials. Subsequently the polystyrene was removed upon thermal annealing to create highly porous OSG thin films. Second, ultrasonic atomization was used to deliver particles into a vacuum chamber during plasma-enhanced CVD of the organosilicon matrix to create composite thin films using an all-CVD technique. This process could extend CVD to applications currently only possible using wet processing techniques or multi-step processing.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>