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   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Lionel C. Kimerling.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Zhang, Yiwen, 1978-</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Materials Science and Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2005-09-27T18:48:37Z</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2004</dim:field>
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   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2004.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (leaves 77-81).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Future growth of optical communication into new application and market space is highly dependent on the ability of optical receivers to increase functionality while reducing price and physical size. Current hybrid receiver technology is inadequate in meeting the cost and performance demands of future market. Monolithic integration and new material systems are potential solutions and have been the focus of research investigation. This thesis summarizes the research progress of monolithic integration on InP, and the achievements in realizing 1.55[micro]m photodetector on GaAs and Si and their potentials for monolithic opto-electronic integrated circuits. The overall trend for next generation receivers is to move towards higher levels of integration, with investigation in new material systems that have the potentials for lower cost and larger scale integration. The impact of monolithic integration optical receiver components is analyzed in a cost analysis model.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Yiwen Zhang.</dim:field>
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   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
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   <dim:field mdschema="dc" element="title" lang="en_US">Next generation optical receivers : integration and new materials platform</dim:field>
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   	&lt;Title>Next generation optical receivers : integration and new materials platform&lt;/Title>
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   	&lt;Abstract>Future growth of optical communication into new application and market space is highly dependent on the ability of optical receivers to increase functionality while reducing price and physical size. Current hybrid receiver technology is inadequate in meeting the cost and performance demands of future market. Monolithic integration and new material systems are potential solutions and have been the focus of research investigation. This thesis summarizes the research progress of monolithic integration on InP, and the achievements in realizing 1.55[micro]m photodetector on GaAs and Si and their potentials for monolithic opto-electronic integrated circuits. The overall trend for next generation receivers is to move towards higher levels of integration, with investigation in new material systems that have the potentials for lower cost and larger scale integration. The impact of monolithic integration optical receiver components is analyzed in a cost analysis model.&lt;/Abstract>
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