2026-09-18T20:49:07Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/291472022-01-13T07:55:00Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Joseph Jacobson.
Ridley, Brent, 1974-
Massachusetts Institute of Technology. Dept. of Architecture. Program in Media Arts & Sciences.
Program in Media Arts and Sciences (Massachusetts Institute of Technology)
2005-09-27T20:53:49Z
2005-09-27T20:53:49Z
1999
1999
http://hdl.handle.net/1721.1/29147
43932131
Thesis (S.M.)--Massachusetts Institute of Technology, Program in Media Arts & Sciences, 1999.
Includes bibliographical references (leaves 49-51).
CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A.
Brent Ridley.
S.M.
51 leaves
4137324 bytes
4137084 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Architecture. Program in Media Arts & Sciences.
Inorganic semiconductors for printed transistors
Thesis
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<Abstract>CdSe nanoparticles have been solution deposited and thermally processed into thin film transistor channels, demonstrating for the first time that an inorganic semiconductor can be printed. A peak field effect mobility of 2.05 cm2V-1s-1 1 was observed for a device processed at 350 °C. The highest ON/OFF ratio, found in a different device, was 8.6x10 3 for a 10 to -10 V gate sweep at a drain-source voltage of -5 V. For the same voltage sweep a mobility of 0.26 cm 2V- s- and an ON/OFF ratio of 1.3 x 103 was observed in a single device. Processing temperatures as low as 250 °C were found to produce semiconducting films that displayed a field effect. A new metathetic synthesis was developed to produce pyridine-capped CdSe nanoparticles at sizes below 20 A.</Abstract>
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