2026-09-19T13:46:13Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/299702022-01-13T07:54:33Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Caroline A. Ross.
Hao, Yaowu, 1969-
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2006-03-24T18:07:39Z
2006-03-24T18:07:39Z
2003
2003
http://hdl.handle.net/1721.1/29970
54764035
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2003.
Includes bibliographical references (p. 133-139).
Interference lithography, together with ion beam etching or lift-off processes, has been utilized to produce large area periodic rectangular patterns. Single layer Co, NiFe, and multilayer Co/Cu/NiFe pseudo spin valve films have been patterned into series of element arrays with different sizes. With the aim of assessing the behavior of future magnetic random access memory (MRAM) devices, the magnetic properties of the patterned elements, including magnetization switching mechanisms, switching field distribution, magnetic thermal stability, and magnetostatic interactions, have been studied using magnetic force microscopy (MFM), SQUID magnetometer, alternating gradient magnetometer (AGM) and vibrating sample magnetometer (VSM). The measured results have been compared with the theoretical shape anisotropy theory to try finding a guideline for controlling magnetic properties of patterned elements.
by Yaowu Hao.
Ph.D.
139 p.
7872847 bytes
13966332 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
Magnetic properties of lithographically patterned thin film magnetic elements for magnetic random access memory applications
Thesis
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