2026-09-20T04:24:55Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/300992022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Akintunde Ibitayo (Tayo) Akinwande.
Chen, Liang-Yu, 1979-
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2006-03-24T18:19:27Z
2006-03-24T18:19:27Z
2004
2004
http://hdl.handle.net/1721.1/30099
55693330
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 108-114).
There is a need for massively parallel, individually addressed and focused electron sources for applications such as flat panel displays, mass storage and multi-beam electron beam lithography. This project fabricates and characterizes double-gated field emission devices with high aspect ratio. One of the gates extracts the electrons while the second gate focuses the electrons into small spots. High aspect ratio silicon field emitters were defined by reactive ion etching of silicon followed by multiple depositions of polycrystalline oxide insulators and silicon gates. The layers were defined by a combination of lithography, chemical mechanical polishing and micromachining. We obtained devices with gate and focus apertures of 0.4[mu]m and 1.2[mu]m diameter. The anode current has very little dependence on the focus voltage and the ratio of the focus field factor to the gate field factor βF / βG is 0.015. Scanning electron micrographs of the devices, numerical simulation and spot size measurements on a phosphor screen confirmed these results. An e-beam resist, PMMA, was successfully exposed using the FEA device as an electron source.
by Liang-Yu Chen.
S.M.
114 p.
3767599 bytes
3767407 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Double-gated field emission arrays
Thesis
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<Abstract>There is a need for massively parallel, individually addressed and focused electron sources for applications such as flat panel displays, mass storage and multi-beam electron beam lithography. This project fabricates and characterizes double-gated field emission devices with high aspect ratio. One of the gates extracts the electrons while the second gate focuses the electrons into small spots. High aspect ratio silicon field emitters were defined by reactive ion etching of silicon followed by multiple depositions of polycrystalline oxide insulators and silicon gates. The layers were defined by a combination of lithography, chemical mechanical polishing and micromachining. We obtained devices with gate and focus apertures of 0.4[mu]m and 1.2[mu]m diameter. The anode current has very little dependence on the focus voltage and the ratio of the focus field factor to the gate field factor βF / βG is 0.015. Scanning electron micrographs of the devices, numerical simulation and spot size measurements on a phosphor screen confirmed these results. An e-beam resist, PMMA, was successfully exposed using the FEA device as an electron source.</Abstract>
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