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Joseph Jacobson. DelHagen, William S Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2006-02-02T18:55:31Z 2006-02-02T18:55:31Z 2004 2004 http://hdl.handle.net/1721.1/31174 61240809 Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004. Includes bibliographical references (p. 73-74). This thesis studies the morphological and electrical properties of copper nanocluster devices generated by DC magnetron sputtering and annealed at temperatures up to 1100 C. At each annealing step, the resistivity of the cluster device was measured and electron micrographs were taken of the cluster depositions. Nanoclusters have been studied for decades because of the unique properties they display that are somewhere between bulk materials and atomic behavior. Recently, techniques have been explored to exploit the depressed melting point effect that small clusters exhibit to fabricate integrated circuit components. These techniques have only been attempted with colloidal solutions of passivated nanoclusters. The purpose of this thesis is to undertake an investigation of the melting point of clusters generated from a sputter source without passivation. Differing from passivated clusters, resistivity of copper cluster films was found to increase with annealing temperatures until about 900 degrees C but drop to one order of magnitude greater than bulk resistivity after annealing at 1100 C. by William S. DelHagen. M.Eng. 74 p. 4572935 bytes 4580636 bytes application/pdf application/pdf eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Fabrication of metallic nanostructures from sputtered nanocluster precursors Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="3eec8570-2896-401a-9959-b9665c18df51"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Fabrication of metallic nanostructures from sputtered nanocluster precursors</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2004</PublicationDate> <Authors> <Author> <DisplayName>DelHagen, William S</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>This thesis studies the morphological and electrical properties of copper nanocluster devices generated by DC magnetron sputtering and annealed at temperatures up to 1100 C. At each annealing step, the resistivity of the cluster device was measured and electron micrographs were taken of the cluster depositions. Nanoclusters have been studied for decades because of the unique properties they display that are somewhere between bulk materials and atomic behavior. Recently, techniques have been explored to exploit the depressed melting point effect that small clusters exhibit to fabricate integrated circuit components. These techniques have only been attempted with colloidal solutions of passivated nanoclusters. The purpose of this thesis is to undertake an investigation of the melting point of clusters generated from a sputter source without passivation. Differing from passivated clusters, resistivity of copper cluster films was found to increase with annealing temperatures until about 900 degrees C but drop to one order of magnitude greater than bulk resistivity after annealing at 1100 C.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>