2026-09-20T00:38:13Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/323292022-01-13T07:54:19Zcom_1721.1_7582com_1721.1_7581col_1721.1_131022
Karen K. Gleason.
Casserly, Thomas Bryan
Massachusetts Institute of Technology. Dept. of Chemical Engineering.
Massachusetts Institute of Technology. Department of Chemical Engineering
2006-03-29T18:34:42Z
2006-03-29T18:34:42Z
2005
2005
http://hdl.handle.net/1721.1/32329
61369442
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005.
Includes bibliographical references.
Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing conditions such as the method and power of precursor activation, pressure, flow rates, and substrate temperature. Systematic variance of deposition conditions allows for the design of materials for a specific application, highlighting the versatility of CVD processes. Spectroscopic tools including Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and nuclear magnetic resonance (NMR) spectroscopy were utilized to characterize film structure and understand the relationship between the structure and properties of materials. Computational quantum mechanics is a power tool applied to explain observed phenomena such as unreferenced chemical shifts in the 29Si NMR of organosilicon thin films, and to examine the thermochemistry of a family of methyl- and methoxymethylsilanes enabling the prediction of initial reactions occurring in the CVD process.
by Thomas Bryan Casserly.
Ph.D.
163 leaves
7983067 bytes
7992506 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Chemical Engineering.
Chemical vapor deposition of organosilicon and sacrificial polymer thin films
CVD of organosilicon and sacrificial polymer thin films
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="3d9ac15b-ce98-4ebb-aedc-f20edd9799a5">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Chemical vapor deposition of organosilicon and sacrificial polymer thin films</Title>
<Subtitle>CVD of organosilicon and sacrificial polymer thin films</Subtitle>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2005</PublicationDate>
<Authors>
<Author>
<DisplayName>Casserly, Thomas Bryan</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Chemical Engineering.</Keyword>
<Abstract>Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing conditions such as the method and power of precursor activation, pressure, flow rates, and substrate temperature. Systematic variance of deposition conditions allows for the design of materials for a specific application, highlighting the versatility of CVD processes. Spectroscopic tools including Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy, Raman spectroscopy, and nuclear magnetic resonance (NMR) spectroscopy were utilized to characterize film structure and understand the relationship between the structure and properties of materials. Computational quantum mechanics is a power tool applied to explain observed phenomena such as unreferenced chemical shifts in the 29Si NMR of organosilicon thin films, and to examine the thermochemistry of a family of methyl- and methoxymethylsilanes enabling the prediction of initial reactions occurring in the CVD process.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>