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   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Ali S. Argon.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Demkowicz, Michael J. (Michael John), 1977-</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Mechanical Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2006-03-29T18:39:38Z</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2005</dim:field>
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   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.</dim:field>
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   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Molecular dynamics simulation of amorphous silicon (a-Si) using the Stillinger- Weber potential reveals the existence of two distinct atomic environments: one solidlike and the other liquidlike. The mechanical behavior of a-Si when plastically deformed to large strain can be completely described by the mass fraction [phi] of liquidlike material in it. Specifically, samples with higher [phi] are more amenable to plastic flow, indicating that liquidlike atomic environments act as plasticity "carriers" in a-Si. When deformed under constant pressure, all a-Si samples converge to a unique value of [phi] characteristic of steady state flow. Discrete stress relaxations were found to be the source of low-temperature plastic flow in a-Si in deformation simulations by potential energy minimization. These relaxations are triggered when a local yielding criterion is satisfied in a small cluster of atoms. The atomic rearrangements accompanying discrete stress relaxations are describable as autocatalytic avalanches of unit shearing events. Every such unit event centers on a clearly identifiable change in bond length between the two split peaks of the second nearest neighbor shell in the radial distribution function (RDF) of bulk a-Si in steady-state low.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Michael J. Demkowicz.</dim:field>
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   <dim:field mdschema="dc" element="subject" lang="en_US">Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Mechanisms of plastic deformation in amorphous silicon by atomistic simulation using the Stillinger-Weber potential</dim:field>
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   	&lt;Title>Mechanisms of plastic deformation in amorphous silicon by atomistic simulation using the Stillinger-Weber potential&lt;/Title>
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   	&lt;PublicationDate>2005&lt;/PublicationDate>
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        	&lt;DisplayName>Demkowicz, Michael J. (Michael John), 1977-&lt;/DisplayName>
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   	&lt;Abstract>Molecular dynamics simulation of amorphous silicon (a-Si) using the Stillinger- Weber potential reveals the existence of two distinct atomic environments: one solidlike and the other liquidlike. The mechanical behavior of a-Si when plastically deformed to large strain can be completely described by the mass fraction [phi] of liquidlike material in it. Specifically, samples with higher [phi] are more amenable to plastic flow, indicating that liquidlike atomic environments act as plasticity &amp;quot;carriers&amp;quot; in a-Si. When deformed under constant pressure, all a-Si samples converge to a unique value of [phi] characteristic of steady state flow. Discrete stress relaxations were found to be the source of low-temperature plastic flow in a-Si in deformation simulations by potential energy minimization. These relaxations are triggered when a local yielding criterion is satisfied in a small cluster of atoms. The atomic rearrangements accompanying discrete stress relaxations are describable as autocatalytic avalanches of unit shearing events. Every such unit event centers on a clearly identifiable change in bond length between the two split peaks of the second nearest neighbor shell in the radial distribution function (RDF) of bulk a-Si in steady-state low.&lt;/Abstract>
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