2026-09-21T09:55:32Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/329112022-01-13T07:54:41Zcom_1721.1_7582com_1721.1_7581col_1721.1_131024
Marc Kastner.
Schriver, Maria C
Massachusetts Institute of Technology. Dept. of Physics.
Massachusetts Institute of Technology. Department of Physics
2006-05-15T20:38:43Z
2006-05-15T20:38:43Z
2005
2005
http://hdl.handle.net/1721.1/32911
62628140
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Physics, 2005.
Includes bibliographical references (p. 49-50).
I have investigated electrical properties of arrays of lead selenide (PbSe) nanocrystals (NC's) of approximately 6nm diameter. The films become substantially more conducting when annealed at 400K, although no chemical changes of the capping layer occur at this low temperature. There is no evidence based on TEM images of annealed and unannealed films that the interparticle spacing changes at 400K. The dependence of the conductance on the voltage applied to a gate separated from the sample by 350nm of SiO2 was also measured. At 77K and 150K, a U-shaped curve is observed with a minimum in conductance near zero gate voltage, indicating that both electrons and holes are injected. At 294K, the conductance falls monotonically with increasing gate voltage, indicating injection of holes only. I calculate the electron and hole mobilities, [mu]e and [mu]h at 77K and 150K and find effective mobilities 10 orders of magnitude smaller than those of bulk PbSe at 77K.
by Maria C. Schriver.
S.B.
50 p.
1960789 bytes
1961491 bytes
application/pdf
application/pdf
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Physics.
Electron transport in lead selenide nanocrystal arrays
Electron transport in PbSe nanocrystal arrays
Thesis
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<Abstract>I have investigated electrical properties of arrays of lead selenide (PbSe) nanocrystals (NC's) of approximately 6nm diameter. The films become substantially more conducting when annealed at 400K, although no chemical changes of the capping layer occur at this low temperature. There is no evidence based on TEM images of annealed and unannealed films that the interparticle spacing changes at 400K. The dependence of the conductance on the voltage applied to a gate separated from the sample by 350nm of SiO2 was also measured. At 77K and 150K, a U-shaped curve is observed with a minimum in conductance near zero gate voltage, indicating that both electrons and holes are injected. At 294K, the conductance falls monotonically with increasing gate voltage, indicating injection of holes only. I calculate the electron and hole mobilities, [mu]e and [mu]h at 77K and 150K and find effective mobilities 10 orders of magnitude smaller than those of bulk PbSe at 77K.</Abstract>
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