<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T09:51:33Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/33917" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/33917</identifier><datestamp>2022-01-13T07:54:36Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131022</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Alexander H. Slocum.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Sprunt, Alexander D. (Alexander Dalziel), 1977-</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Mechanical Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2006-08-25T18:56:34Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2006-08-25T18:56:34Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2005</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2005</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/33917</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">67293103</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 263-279).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Complementary and nano-smooth single-crystal-silicon surfaces have been fabricated by deliberately fracturing a weakened portion of a larger structure whose flexural mechanism refines and concentrates an externally applied load to a notched specimen region pre-.fracture and acts as a precision bearing post-fracture. When material is not ejected, crystalline silicon's extreme brittleness at room temperature results in complementary fracture surfaces; "closed" gaps of 20-30 nanometers are typical. Lithographic, focused ion beam, and anisotropically etched notches as well as crystal orientation and specimen thickness were studied, and a method was developed for fabricating smooth surfaces perpendicular to the wafer plane: 10 micrometer square specimens oriented with the (110) plane are fully notched by anisotropic etching (KOH) and fractured within a structure optimized to apply pure tension. Prototype MEMS variable capacitors employing fracture surfaces as separable parallel plates have been developed. The advantage of fracture surfaces over etched surfaces is their exceptional flatness or complementarity, which allow them to very closely approach each other prior to contact.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">(cont.) For a parallel-plate capacitor, a small minimum separation disproportionately improves dynamic range because capacitance scales with the inverse of separation. To take utmost advantage of the surfaces' qualities, unstable pull-in must be avoided. Modelling of the three-way force balance between the structure's compliance, the capacitive force between the fracture surfaces, and the zipping electrostatic actuator demonstrates the system is stable when the actuator is working against the spring force and not the capacitive force. The structure and the capacitor are tuned to ensure system stability to nanometer scale separations. During fabrication of the variable capacitor, it was discovered that high temperature processing associated with the thermal oxidation necessary for the actuators blunted the anisotropically etched notches. This blunting occurred even when the notches were covered with a nitride diffusion barrier, and was likely due to diffusional smoothing. Blunt notches produced material ejecting fractures with non-functional surfaces, but since material ejection is characteristic of higher stress fractures, it may be useful for toughening anisotropically etched structures.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">(cont.) The blunting problem was overcome by masking the notch etch with thermal oxide after all high temperature processing was complete.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Alexander D. Sprunt.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">Ph.D.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">279 p.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent">15626020 bytes</dim:field>
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   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">A variable capacitor made from single crystal silicon fracture surface pairs</dim:field>
   <dim:field mdschema="dc" element="type" lang="en_US">Thesis</dim:field>
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	&lt;Language>eng&lt;/Language>
   	&lt;Title>A variable capacitor made from single crystal silicon fracture surface pairs&lt;/Title>
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    	&lt;Publication>
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   	&lt;PublicationDate>2005&lt;/PublicationDate>
   	&lt;Authors>
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        	&lt;DisplayName>Sprunt, Alexander D. (Alexander Dalziel), 1977-&lt;/DisplayName>
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            &lt;DisplayName>Massachusetts Institute of Technology&lt;/DisplayName>
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    &lt;License>http://dspace.mit.edu/handle/1721.1/7582&lt;/License>
    &lt;Keyword>Mechanical Engineering.&lt;/Keyword>
   	&lt;Abstract>Complementary and nano-smooth single-crystal-silicon surfaces have been fabricated by deliberately fracturing a weakened portion of a larger structure whose flexural mechanism refines and concentrates an externally applied load to a notched specimen region pre-.fracture and acts as a precision bearing post-fracture. When material is not ejected, crystalline silicon&amp;apos;s extreme brittleness at room temperature results in complementary fracture surfaces; &amp;quot;closed&amp;quot; gaps of 20-30 nanometers are typical. Lithographic, focused ion beam, and anisotropically etched notches as well as crystal orientation and specimen thickness were studied, and a method was developed for fabricating smooth surfaces perpendicular to the wafer plane: 10 micrometer square specimens oriented with the (110) plane are fully notched by anisotropic etching (KOH) and fractured within a structure optimized to apply pure tension. Prototype MEMS variable capacitors employing fracture surfaces as separable parallel plates have been developed. The advantage of fracture surfaces over etched surfaces is their exceptional flatness or complementarity, which allow them to very closely approach each other prior to contact.&lt;/Abstract>
   	&lt;Abstract>(cont.) For a parallel-plate capacitor, a small minimum separation disproportionately improves dynamic range because capacitance scales with the inverse of separation. To take utmost advantage of the surfaces&amp;apos; qualities, unstable pull-in must be avoided. Modelling of the three-way force balance between the structure&amp;apos;s compliance, the capacitive force between the fracture surfaces, and the zipping electrostatic actuator demonstrates the system is stable when the actuator is working against the spring force and not the capacitive force. The structure and the capacitor are tuned to ensure system stability to nanometer scale separations. During fabrication of the variable capacitor, it was discovered that high temperature processing associated with the thermal oxidation necessary for the actuators blunted the anisotropically etched notches. This blunting occurred even when the notches were covered with a nitride diffusion barrier, and was likely due to diffusional smoothing. Blunt notches produced material ejecting fractures with non-functional surfaces, but since material ejection is characteristic of higher stress fractures, it may be useful for toughening anisotropically etched structures.&lt;/Abstract>
   	&lt;Abstract>(cont.) The blunting problem was overcome by masking the notch etch with thermal oxide after all high temperature processing was complete.&lt;/Abstract>
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