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   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Dimitri Antoniadis.</dim:field>
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   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (leaves 87-89).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Dennis Okumu Ouma.</dim:field>
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   <dim:field mdschema="dc" element="title" lang="en_US">Optimal design of channel doping for fully depleted SOI MOSFETs</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Optimal design of channel doping for fully depleted silicon-on-insulator metal oxide semiconductor field effect transistors.</dim:field>
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   	&lt;Title>Optimal design of channel doping for fully depleted SOI MOSFETs&lt;/Title>
   	&lt;Subtitle>Optimal design of channel doping for fully depleted silicon-on-insulator metal oxide semiconductor field effect transistors.&lt;/Subtitle>
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