2026-09-18T20:12:51Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/370942022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Leslie A. Kolodziejski.
Young, Sue Y
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2007-04-03T17:10:56Z
2007-04-03T17:10:56Z
2006
2006
http://hdl.handle.net/1721.1/37094
84842849
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
Includes bibliographical references (p. 68-69).
This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of photons in more than one active region. The electrical characterization of InGaAs/GaAs tunnel junctions is presented. This thesis also gives an overview of the electrical and optical behavior of single-stage lasers as well as two-stage lasers coupled by InGaAs/GaAs tunnel junctions. Telecommunication applications motivated the use of InAs quantum dots and InAsP quantum dashes in the active layer design to provide near-infrared emission.
by Sue Y. Young.
M.Eng.
78 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Characterization of novel III-V semiconductor devices
Characterization of novel three-five semiconductor devices
Thesis
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