<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T15:02:04Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/37678" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/37678</identifier><datestamp>2022-01-13T07:54:33Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Eugene A. Fitzgerald.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Zhao, Xinyue, M. Eng. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Materials Science and Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2007-06-28T12:22:10Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2007-06-28T12:22:10Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2006</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2006</dim:field>
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   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">124512485</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">It is well known that the use of high-brightness LEDs for illumination has the potential to substitute conventional lighting and revolutionize the lighting industry over the next 10 to 20 years. However, successful penetration of this extremely large lighting market would require vast improvements in power conversion efficiencies, color index, light output per device and drastic reduction in cost. Quantum Dot white LED (QD WLED) technology may be one of the best choices, due to its higher energy efficiency, larger color render in index, better versatility and more importantly lower cost, compared to conventional blue LED plus YAG: Ce yellow phosphor technology. Due to the fundamental difference of the material structure, QD LEDs will win a steady position among existing white LED patents and a hybrid fabless plus IP business model has the best position to promote this technology to maximize its benefits and potential for the entire LED industry.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Xinyue Zhao.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">M.Eng.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">54 leaves</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Materials Science and Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Commercialization of Quantum Dot White Light Emitting Diode technology</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Commercialization of QD WLED technology</dim:field>
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   	&lt;Title>Commercialization of Quantum Dot White Light Emitting Diode technology&lt;/Title>
   	&lt;Subtitle>Commercialization of QD WLED technology&lt;/Subtitle>
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   	&lt;PublicationDate>2006&lt;/PublicationDate>
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    &lt;Keyword>Materials Science and Engineering.&lt;/Keyword>
   	&lt;Abstract>It is well known that the use of high-brightness LEDs for illumination has the potential to substitute conventional lighting and revolutionize the lighting industry over the next 10 to 20 years. However, successful penetration of this extremely large lighting market would require vast improvements in power conversion efficiencies, color index, light output per device and drastic reduction in cost. Quantum Dot white LED (QD WLED) technology may be one of the best choices, due to its higher energy efficiency, larger color render in index, better versatility and more importantly lower cost, compared to conventional blue LED plus YAG: Ce yellow phosphor technology. Due to the fundamental difference of the material structure, QD LEDs will win a steady position among existing white LED patents and a hybrid fabless plus IP business model has the best position to promote this technology to maximize its benefits and potential for the entire LED industry.&lt;/Abstract>
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