2026-09-19T09:04:57Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/376792022-01-13T07:54:33Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Caroline A. Ross.
Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2007-06-28T12:22:16Z
2007-06-28T12:22:16Z
2006
2006
http://hdl.handle.net/1721.1/37679
124514524
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.
Includes bibliographical references (leaves 66-68).
MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called "the ideal memory", it can potentially combine the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. However, it is the need for a fast and non-volatile computer memory that has been the key driver for evolution of this technology. At the moment, MRAM is in its final stages of development and much of the current research concentrates on issues like reducing the write current, increasing the density and making the process more reproducible. A lot of companies are pursuing research on this technology and are likely to introduce it into the market in the near future. However, it will be a while before MRAM can replace conventional memories. Nevertheless, since MRAM can resist high radiation, and can operate in extreme temperature conditions, it is likely that we will see the first MRAM in applications that need such properties.
by Rangarajan Vijayaraghavan.
M.Eng.
69 leaves
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
An analysis of MRAM based memory technologies
Thesis
application/pdf
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="9e655168-bbfa-4f9d-8b79-96a80389e70f">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>An analysis of MRAM based memory technologies</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2006</PublicationDate>
<Authors>
<Author>
<DisplayName>Vijayaraghavan, Rangarajan, M. Eng. Massachusetts Institute of Technology</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Materials Science and Engineering.</Keyword>
<Abstract>MRAM is a memory (RAM) technology that uses electron spin to store information. Often been called "the ideal memory", it can potentially combine the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk, and all this while consuming a very low amount of power. However, it is the need for a fast and non-volatile computer memory that has been the key driver for evolution of this technology. At the moment, MRAM is in its final stages of development and much of the current research concentrates on issues like reducing the write current, increasing the density and making the process more reproducible. A lot of companies are pursuing research on this technology and are likely to introduce it into the market in the near future. However, it will be a while before MRAM can replace conventional memories. Nevertheless, since MRAM can resist high radiation, and can operate in extreme temperature conditions, it is likely that we will see the first MRAM in applications that need such properties.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>