2026-09-20T21:40:48Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/379332022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Franz X. Kärtner.
Byun, Hyunil
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2007-07-18T13:12:36Z
2007-07-18T13:12:36Z
2006
2006
http://hdl.handle.net/1721.1/37933
136972912
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
Includes bibliographical references (p. 105-107).
In this thesis, Silicon-Germanium (SiGe) Saturable Bragg Reflectors (SBR) and Erbium-doped waveguide chips are fabricated and characterized as crucial components for integration of a mode-locked laser on a Si-chip. The SiGe-SBR is designed to be compatible with Si-based fabrication processes for monolithic integration and to need as little saturation fluence as possible so that it can be used for higher repetition rate lasers application. The SBRs are tested experimentally inside an Erbium glass bulk laser. We also tested Erbium-doped waveguide chips fabricated by Inplane Photonics Inc. to verify that it has enough gain to function as a gain medium of an on-chip laser. These components will be important as intermediate steps before finally integrating mode-locked laser.
by Hyunil Byun.
S.M.
107 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Silicon-germanium saturable absorbers and erbium-doped waveguides for integrated mode-locked lasers
Thesis
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Publication
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