2026-09-19T15:23:29Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/386712022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Judy L. Hoyt.
Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2007-08-29T20:42:07Z
2007-08-29T20:42:07Z
2006
2007
http://hdl.handle.net/1721.1/38671
163909584
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2007.
Includes bibliographical references (leaves 49-53).
The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.
by Leonardo Gomez.
S.M.
53 leaves
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
Electron transport in UTB fully depleted n-MOSFETS fabricated on SSDOI with body thickness ranging from 22nm to 25 nm
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="8fb6db94-d1c2-4e5a-bc63-678c7e1808b0">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm</Title>
<Subtitle>Electron transport in UTB fully depleted n-MOSFETS fabricated on SSDOI with body thickness ranging from 22nm to 25 nm</Subtitle>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2007</PublicationDate>
<Authors>
<Author>
<DisplayName>Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross section transmission electron microscopy. Devices with body thicknesses ranging from 2 nm to 25 nm are studied. Significant electron mobility enhancements ([approx] 1.8x) are observed in SSDOI compared to unstrained SOI for body thicknesses above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>