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Anantha P. Chandrakasan and Jing Kong. Pan, Tao, S.M. Massachusetts Institute of Technology Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2008-02-27T22:43:22Z 2008-02-27T22:43:22Z 2007 2007 http://hdl.handle.net/1721.1/40527 191911545 Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007. Includes bibliographical references (p. 85-89). Carbon nanotubes (CNTs) are nanometer-diameter cylinders formed from rolled-up graphene sheets which have found widespread interests due to their many excellent electrical properties. In particular, most of them are direct bandgap semiconductors from which carbon nanotube field effect transistors (CNTFETs) can be made. The small feature size and high electron mobility of the CNT makes it attractive and a good candidate to replace modern MOSFETs. So far, most fabricated CNTFETs conduct currents only on the order of microamps under low voltage bias which cannot be used to drive large output loads. In this work, we attempt to explore the ultimate performance benefits from utilizing multiple CNTs for CNTFETs. Two ways of making multi-tube CNTFETs are demonstrated in this thesis. Devices are fabricated, measured and analyzed. A simple model is used to evaluate the ideal ballistic behavior of CNTFETs. Parasitics that are measured from experiments and extracted from numerical tools are added to the model. As an application, we compare the performance of CNTFETs with MOSFETs, both used as power transistors in a Buck DC-DC converter circuit. by Tao Pan. S.M. 89 p. eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Carbon nanotube field effect transistors for power application CNTFETs for power application Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="dec40151-6053-4743-9abf-a32f4cc5dca0"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Carbon nanotube field effect transistors for power application</Title> <Subtitle>CNTFETs for power application</Subtitle> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2007</PublicationDate> <Authors> <Author> <DisplayName>Pan, Tao, S.M. Massachusetts Institute of Technology</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Carbon nanotubes (CNTs) are nanometer-diameter cylinders formed from rolled-up graphene sheets which have found widespread interests due to their many excellent electrical properties. In particular, most of them are direct bandgap semiconductors from which carbon nanotube field effect transistors (CNTFETs) can be made. The small feature size and high electron mobility of the CNT makes it attractive and a good candidate to replace modern MOSFETs. So far, most fabricated CNTFETs conduct currents only on the order of microamps under low voltage bias which cannot be used to drive large output loads. In this work, we attempt to explore the ultimate performance benefits from utilizing multiple CNTs for CNTFETs. Two ways of making multi-tube CNTFETs are demonstrated in this thesis. Devices are fabricated, measured and analyzed. A simple model is used to evaluate the ideal ballistic behavior of CNTFETs. Parasitics that are measured from experiments and extracted from numerical tools are added to the model. As an application, we compare the performance of CNTFETs with MOSFETs, both used as power transistors in a Buck DC-DC converter circuit.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>