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   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Charles G. Sodini.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Jayaraman, Rajsekhar</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="accessioned">2008-05-19T15:56:46Z</dim:field>
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   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">1988</dim:field>
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   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">18969291</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1988.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Bibliography: leaves 164-178.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Rajsekhar Jayaraman.</dim:field>
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   <dim:field mdschema="dc" element="title" lang="en_US">Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics</dim:field>
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   	&lt;Title>Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics&lt;/Title>
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