<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-19T18:27:22Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/43065" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/43065</identifier><datestamp>2022-01-13T07:54:29Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Karl K. Berggren.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Winston, Donald, S.M. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2008-11-07T18:58:10Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2008-11-07T18:58:10Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2008</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2008</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/43065</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">244105802</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 53-54).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable optical transitions in certain photoresist compounds. After addressing prior work in resolution enhancement via optical nodes (for metastable atom localization, reversible absorbance modulation, and fluorescence microscopy), I examine the issues of resist formulation, optical pulse width bounds due to resist kinetics, and patterning schemes for low- and high-volume throughput. The experimental realization of stimulated emission depletion is described, and challenges for lithography using this technique are discussed.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Donald Winston.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">54 p.</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by 
copyright. They may be viewed from this source for any purpose, but 
reproduction or distribution in any format is prohibited without written 
permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Nodal photolithography : lithography via far-field optical nodes in the resist</dim:field>
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   	&lt;Title>Nodal photolithography : lithography via far-field optical nodes in the resist&lt;/Title>
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   	&lt;PublicationDate>2008&lt;/PublicationDate>
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        	&lt;DisplayName>Winston, Donald, S.M. Massachusetts Institute of Technology&lt;/DisplayName>
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    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>In this thesis, I investigate one approach - stimulated emission depletion - to surmounting the diffraction limitation of optical lithography. This approach uses farfield optical nodes to orchestrate reversible, saturable optical transitions in certain photoresist compounds. After addressing prior work in resolution enhancement via optical nodes (for metastable atom localization, reversible absorbance modulation, and fluorescence microscopy), I examine the issues of resist formulation, optical pulse width bounds due to resist kinetics, and patterning schemes for low- and high-volume throughput. The experimental realization of stimulated emission depletion is described, and challenges for lithography using this technique are discussed.&lt;/Abstract>
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