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Tomás Palacios. Chung, Jinwook W. (Jinwook Will) Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2009-01-30T16:37:44Z 2009-01-30T16:37:44Z 2008 2008 http://hdl.handle.net/1721.1/44366 276937615 Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (leaves 77-80). In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency performance could be improved, the superior breakdown characteristics of nitride semiconductors would make these devices the best option for power amplifiers at any frequency. To achieve this goal, we have first identified some critical parameters that limit the high frequency performance of AlGaN/GaN HEMTs and then we have demonstrated several new technologies to increase the performance. Some of these technologies include advanced drain delay engineering, charge control in the channel and new N-face GaN HEMTs. Although more work is needed in the future to combine all these new technologies, the initial results are extremely promising. by Jinwook W. Chung. S.M. 80 leaves eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors Thesis application/pdf Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="a5989985-1718-4e32-b068-a2a4ed22fb7e"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2008</PublicationDate> <Authors> <Author> <DisplayName>Chung, Jinwook W. (Jinwook Will)</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for high frequency applications. In spite of their excellent material properties, GaN-based HEMTs are still below the theoretical predictions in their high frequency performance. If the frequency performance could be improved, the superior breakdown characteristics of nitride semiconductors would make these devices the best option for power amplifiers at any frequency. To achieve this goal, we have first identified some critical parameters that limit the high frequency performance of AlGaN/GaN HEMTs and then we have demonstrated several new technologies to increase the performance. Some of these technologies include advanced drain delay engineering, charge control in the channel and new N-face GaN HEMTs. Although more work is needed in the future to combine all these new technologies, the initial results are extremely promising.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>