2026-09-19T11:53:24Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/458882022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Leslie A. Kolodziejski.
Nabanja, Sheila
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2009-06-30T16:32:51Z
2009-06-30T16:32:51Z
2008
2008
http://hdl.handle.net/1721.1/45888
320436763
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.
Includes bibliographical references (p. 87-89).
Semiconductor lasers using quantum-dots in their active regions have been reported to exhibit significant performance advantages over their bulk semiconductor and quantum-well counterparts namely: low threshold current, high differential gain and highly temperature stable light-current characteristics. This thesis investigates the lasing characteristics of a ridge-waveguide laser containing seven layers of quantum dots as the active region. A summary of the electrical and optical performance data of the heterostructure quantum dot lasers, as well as previously fabricated quantum well lasers, is presented. The motivation of using InAs quantum dots in the active region is to produce near infrared emission for telecommunication applications.
by Sheila Nabanja.
S.M.
89 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Design and fabrication of quantum-dot lasers
Thesis
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