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Jing Kong and Jakub Kedzierski. Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science 2009-06-30T17:24:03Z 2009-06-30T17:24:03Z 2008 2008 http://hdl.handle.net/1721.1/46130 392629383 Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008. Includes bibliographical references (p. 91-97). Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs. by Pei-Lan Hsu. M.Eng. 97 p. eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Electrical Engineering and Computer Science. Choosing a gate dielectric for graphene based transistors Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="590d1a7a-1204-4d50-8392-6ba142fdec01"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Choosing a gate dielectric for graphene based transistors</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2008</PublicationDate> <Authors> <Author> <DisplayName>Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Electrical Engineering and Computer Science.</Keyword> <Abstract>Much attention has recently been focused on graphene as an alternative semiconductor to silicon. Transistors with graphene conduction channels have only recently been fabricated and their performance remains to be optimized. In this thesis, different candidate gate dielectric materials are examined for use in graphene transistors. Evaporated HfO2 is ultimately used as the gate dielectric for graphene field effect transistors (FETs) on six different graphene samples. Two types of graphene were used: graphene made from the sublimation of SiC and epitaxial graphene synthesized by chemical vapor deposition (CVD) onto nickel. Electrical performance of the graphene transistors were found to vary significantly depending on the local graphene microstructure. The gate dielectric was found to crack on thick regions of graphene but stay intact on thin regions. Dielectric charging resulted in hysteretic effects in device performance. As consistent with HfO2 used in silicon CMOS devices, electron mobilities were lower than hole mobilities in the fabricated graphene FETs.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>