2026-09-19T03:02:23Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/533212022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Rajeev J. Ram.
Santhanam, Parthiban
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2010-03-25T15:31:08Z
2010-03-25T15:31:08Z
2009
2009
http://hdl.handle.net/1721.1/53321
550579912
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2009.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 191-193).
Although thermoelectric elements increasingly incorporate nano-scale features in similar material systems as other micro-electronic devices, the former are described in the language of irreversible thermodynamics while devices such as heterojunction bipolar transistors and semiconductor lasers are often described with the drift-diffusion equations. We present a microscopic description of the thermoelectric effects using a generalization of the common drift-diffusion formulation of semi-classical transport. We then replicate these basic results in a commerical device simulation package to explore Peltier cooling at a basic p-n junction. This framework should enable the design of spatially-inhomogenenous thermoelectric elements and internally-cooled micro-electronic devices.
by Parthiban Santhanam.
S.M.
193 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Generalized drift-diffusion for microscopic thermoelectricity
Thesis
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