2026-09-20T00:13:29Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/542042022-01-13T07:54:33Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Eugene A. Fitzgerald.
Susantyoko, Rahmat Agung
Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
Massachusetts Institute of Technology. Department of Materials Science and Engineering
2010-04-26T19:18:19Z
2010-04-26T19:18:19Z
2009
2009
http://hdl.handle.net/1721.1/54204
567642878
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student submitted PDF version of thesis.
Includes bibliographical references (p. 47-48).
The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and implementation perspectives. Two applications were investigated. For monocrystalline thin film Si solar cell, layer transfer technology is too expensive, while sliver Si technology is more applicable, but impossible to add DBR and DG structure on sliver Si that still attached on native wafer. For amorphous thin film Si solar cell, the cost model was created. Even though best-case assumptions were used, the cost/performance ratio of amorphous thin film Si equipped with proposed light trapping technology was still higher (worse) than incumbent amorphous thin film Si solar cell.
by Rahmat Agung Susantyoko.
M.Eng.
52 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
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http://dspace.mit.edu/handle/1721.1/7582
Materials Science and Engineering.
Technological assessment of light-trapping technology for thin-film Si solar cell
Thesis
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<Abstract>The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and implementation perspectives. Two applications were investigated. For monocrystalline thin film Si solar cell, layer transfer technology is too expensive, while sliver Si technology is more applicable, but impossible to add DBR and DG structure on sliver Si that still attached on native wafer. For amorphous thin film Si solar cell, the cost model was created. Even though best-case assumptions were used, the cost/performance ratio of amorphous thin film Si equipped with proposed light trapping technology was still higher (worse) than incumbent amorphous thin film Si solar cell.</Abstract>
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