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Kripa Varanasi. Jones, A. Andrew D., III (Akhenaton-Andrew Dhafir) Massachusetts Institute of Technology. Dept. of Mechanical Engineering. Massachusetts Institute of Technology. Department of Mechanical Engineering 2010-11-08T16:30:52Z 2010-11-08T16:30:52Z 2010 2010 http://hdl.handle.net/1721.1/59855 676917414 Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010. This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections. Cataloged from student submitted PDF version of thesis. Includes bibliographical references (p. 51-52). Atomic Layer Deposition (ALD) is a process used to deposit nanometer scale films for use in nano electronics. A typical experimental reactor consist of a warm wall horizontal flow tube, a single disc mounted halfway down the tube, and an alternating cycle flow between a reactant gas and a wash in a carrier gas. The process is governed by the desire to achieve a uniform coating on the substrate layer. Optimization is currently accomplished by monitoring the precursor delivery and the growth of the film and adjusting flow rates accordingly. Maslar et al (2008) showed that it is possible to use in situ monitoring of the gas phase for optimization. With the data provided from that work, it is now possible to verify a numerical model of the flow process. The process can be thought of in 5 parts: unsteady undeveloped pipe flow, mixing, flow around a disc, flow impinging on a disc, boundary layer reactions on a wall. In this thesis, I numerically simulated the unsteady undeveloped pipe flow, mixing and boundary layer reactions on the wall. I also describe but do not solve a model for the complete process and propose criteria for optimization. by A. Andrew D. Jones, III. S.B. 52 p. eng Massachusetts Institute of Technology M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 Mechanical Engineering. Numerical simulation of a single wafer atomic layer deposition process Thesis application/pdf false Publication unknown unknown <Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="a375cb34-cf68-4fdb-b662-7d796ec7f54d"> <Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type> <Language>eng</Language> <Title>Numerical simulation of a single wafer atomic layer deposition process</Title> <PublishedIn> <Publication> </Publication> </PublishedIn> <PublicationDate>2010</PublicationDate> <Authors> <Author> <DisplayName>Jones, A. Andrew D., III (Akhenaton-Andrew Dhafir)</DisplayName> <Affiliation> <OrgUnit> </OrgUnit> </Affiliation> </Author> </Authors> <Editors> </Editors> <Publishers> <Publisher> <DisplayName>Massachusetts Institute of Technology</DisplayName> <OrgUnit /> </Publisher> </Publishers> <License>http://dspace.mit.edu/handle/1721.1/7582</License> <Keyword>Mechanical Engineering.</Keyword> <Abstract>Atomic Layer Deposition (ALD) is a process used to deposit nanometer scale films for use in nano electronics. A typical experimental reactor consist of a warm wall horizontal flow tube, a single disc mounted halfway down the tube, and an alternating cycle flow between a reactant gas and a wash in a carrier gas. The process is governed by the desire to achieve a uniform coating on the substrate layer. Optimization is currently accomplished by monitoring the precursor delivery and the growth of the film and adjusting flow rates accordingly. Maslar et al (2008) showed that it is possible to use in situ monitoring of the gas phase for optimization. With the data provided from that work, it is now possible to verify a numerical model of the flow process. The process can be thought of in 5 parts: unsteady undeveloped pipe flow, mixing, flow around a disc, flow impinging on a disc, boundary layer reactions on a wall. In this thesis, I numerically simulated the unsteady undeveloped pipe flow, mixing and boundary layer reactions on the wall. I also describe but do not solve a model for the complete process and propose criteria for optimization.</Abstract> <Access xmlns="http://purl.org/coar/access_right" > </Access> </Publication>