2026-09-19T14:42:38Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/602152022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Judy L. Hoyt and Dimitri A. Antoniadis.
Teherani, James Towfik
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2010-12-06T18:50:30Z
2010-12-06T18:50:30Z
2010
2010
http://hdl.handle.net/1721.1/60215
679684306
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student submitted PDF version of thesis.
Includes bibliographical references (p. 82-83).
This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations.
by James Towfik Teherani.
S.M.
83 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Band-to-band tunneling in silicon diodes and tunnel transistors
Thesis
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<Abstract>This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling direction along <100> and <110> crystal directions. A theoretical analysis based on the Wentzel-Kramers-Brillouin (WKB) approximation for tunneling probability combined with an uncoupled full-band Poisson equation solver and the calculated band structure changes is developed to model the experimental results. Reasonable agreement between experimental data and theoretical calculations is found when comparing the relative change in tunneling current at 1 V reverse-bias versus strain for different substrate orientation/strain configurations.</Abstract>
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