2026-09-19T19:48:07Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/624482022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Rajeev R. Ram.
Kapusta, Evelyn Wallis
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2011-04-25T16:00:24Z
2011-04-25T16:00:24Z
2010
2010
http://hdl.handle.net/1721.1/62448
711100539
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 158-162).
The photonic industry is driven by the information ages demand for higher bandwidth. To meet the future demands of 10 Tbit networks, photonic integrated circuits (PIC) are required. Device performance is affected by everything from component coupling to electrical connectivity of the active components. However the most fundamental and often challenging aspect of photonic device fabrication is dimensional control. At 1550 nm, line width tolerance range between 1 pm to 0.05 pm.[1] Although these tolerances are easily achieved using lithography technology such as electron beam lithography (EBL) or 193 nm projection, neither are viable optical options for InP production.[2] The purpose of this thesis is to develop a fabrication process for InP Faraday rotators using standard, high throughput lithographic and etching techniques. The Faraday rotator is a 1.4 Jim InP-InGaAsP-InP waveguide with a line width tolerance of ± 0.07 pm.
by Evelyn Wallis Kapusta.
S.M.
162 p.
eng
Massachusetts Institute of Technology
M.I.T. theses are protected by
copyright. They may be viewed from this source for any purpose, but
reproduction or distribution in any format is prohibited without written
permission. See provided URL for inquiries about permission.
http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
High fidelity pattern transfer in InP photonic device fabrication
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="03125383-b50d-4c13-a95b-c3253a9df2e1">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>High fidelity pattern transfer in InP photonic device fabrication</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2010</PublicationDate>
<Authors>
<Author>
<DisplayName>Kapusta, Evelyn Wallis</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>The photonic industry is driven by the information ages demand for higher bandwidth. To meet the future demands of 10 Tbit networks, photonic integrated circuits (PIC) are required. Device performance is affected by everything from component coupling to electrical connectivity of the active components. However the most fundamental and often challenging aspect of photonic device fabrication is dimensional control. At 1550 nm, line width tolerance range between 1 pm to 0.05 pm.[1] Although these tolerances are easily achieved using lithography technology such as electron beam lithography (EBL) or 193 nm projection, neither are viable optical options for InP production.[2] The purpose of this thesis is to develop a fabrication process for InP Faraday rotators using standard, high throughput lithographic and etching techniques. The Faraday rotator is a 1.4 Jim InP-InGaAsP-InP waveguide with a line width tolerance of ± 0.07 pm.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>