2026-09-20T00:34:00Zhttps://dspace.mit.edu/server/oai/requestoai:dspace.mit.edu:1721.1/645972022-01-13T07:54:29Zcom_1721.1_7582com_1721.1_7581col_1721.1_131023
Dimitri A. Antoniadis.
Polyzoeva, Evelina Aleksandrova
Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
2011-06-20T15:57:50Z
2011-06-20T15:57:50Z
2011
2011
http://hdl.handle.net/1721.1/64597
727066521
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 46-48).
The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable native oxides. The hole mobility of strained-Ge ring-FETs with and without Si cap and with A12 0 3/WN gate stack is investigated. The dependence of the mobility on the strained-Ge layer thickness and the silicon cap thickness is explored. Decrease of 13 % in the hole mobility is observed in the devices with thicker Ge channel suggesting partial relaxation of the strained-Ge. Removal of the Si cap results in almost 40 % decrease in hole mobility suggesting that the presence Si cap is required in realizing high mobility devices.
by Evelina Aleksandrova Polyzoeva.
S.M.
vi, 48 p.
eng
Massachusetts Institute of Technology
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http://dspace.mit.edu/handle/1721.1/7582
Electrical Engineering and Computer Science.
Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Thesis
application/pdf
false
Publication
unknown
unknown
<Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="11026527-3a43-4e1d-8563-5cfdeed1d6ba">
<Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843</Type>
<Language>eng</Language>
<Title>Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack</Title>
<PublishedIn>
<Publication>
</Publication>
</PublishedIn>
<PublicationDate>2011</PublicationDate>
<Authors>
<Author>
<DisplayName>Polyzoeva, Evelina Aleksandrova</DisplayName>
<Affiliation>
<OrgUnit>
</OrgUnit>
</Affiliation>
</Author>
</Authors>
<Editors>
</Editors>
<Publishers>
<Publisher>
<DisplayName>Massachusetts Institute of Technology</DisplayName>
<OrgUnit />
</Publisher>
</Publishers>
<License>http://dspace.mit.edu/handle/1721.1/7582</License>
<Keyword>Electrical Engineering and Computer Science.</Keyword>
<Abstract>The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable native oxides. The hole mobility of strained-Ge ring-FETs with and without Si cap and with A12 0 3/WN gate stack is investigated. The dependence of the mobility on the strained-Ge layer thickness and the silicon cap thickness is explored. Decrease of 13 % in the hole mobility is observed in the devices with thicker Ge channel suggesting partial relaxation of the strained-Ge. Removal of the Si cap results in almost 40 % decrease in hole mobility suggesting that the presence Si cap is required in realizing high mobility devices.</Abstract>
<Access xmlns="http://purl.org/coar/access_right"
>
</Access>
</Publication>