<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-18T19:36:04Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/74893" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/74893</identifier><datestamp>2026-06-05T20:26:39Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131024</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">David E. Hardt.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Crawford, Gregory Allan</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Mechanical Engineering</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2012-11-19T19:16:09Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2012-11-19T19:16:09Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2012</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2012</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/74893</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">814478697</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (Nav. E. and S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 107).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Electrical Discharge Machining (EDM) is an advanced machining process that removes material via thermal erosion through a plasma arc. The machining process is accomplished through the application of high frequency current (typically through a fine wire or some other electrode) to a conductive workpiece. The electrode is physically separated from the workpiece by some small distance and the potential difference is commonly discharged through an insulating dielectric material such as deionized water or oil. This short duration application of current produces a spark across the gap between the electrode and workpiece, causing vaporization and melting of local material in both the electrode and workpiece. The EDM process is most frequently used for conductive substrates (i.e. metals); however, research has shown that the process may be successfully used on semiconductor substrates such as doped silicon wafers'. The purpose of this research was to characterize the EDM process using Design of Experiments (DOE) statistical methodology on highly doped silicon wafer workpieces for material removal rate (MRR) and surface roughness (Ra) for both Wire EDM (WEDM) and die sinker EDM machines. Once process characterization was completed, confirmation testing was conducted for each machine. The applied spark energy had a significant impact on processing speed for both machines as expected, with the WEDM processing also heavily dependent on selected control speed. Surface roughness was also found to be highly dependent on spark energy for both machines. Evaluation of minimum obtainable feature sizes for some specific geometries as well as evaluation of various effects on the processing of silicon were also conducted.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Gregory Allan Crawford.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">Nav.E.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">127 p.</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by 
copyright. They may be viewed from this source for any purpose, but 
reproduction or distribution in any format is prohibited without written 
permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Mechanical Engineering.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Process characterization of Electrical Discharge Machining of highly doped silicon</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Process characterization of EDM of highly doped silicon</dim:field>
   <dim:field mdschema="dc" element="type" lang="en_US">Thesis</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="mimetype">application/pdf</dim:field>
   <dim:field mdschema="dspace" element="authorsordered">false</dim:field>
   <dim:field mdschema="dspace" element="entity" qualifier="type">Publication</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="cerif" element="openaire" authority="" confidence="-1">&lt;Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="332987ed-69c1-4ac0-9558-51bffd59d6b7">
	&lt;Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843&lt;/Type>
	&lt;Language>eng&lt;/Language>
   	&lt;Title>Process characterization of Electrical Discharge Machining of highly doped silicon&lt;/Title>
   	&lt;Subtitle>Process characterization of EDM of highly doped silicon&lt;/Subtitle>
   	&lt;PublishedIn>
    	&lt;Publication>
      	&lt;/Publication>
   	&lt;/PublishedIn>
   	&lt;PublicationDate>2012&lt;/PublicationDate>
   	&lt;Authors>
      	&lt;Author>
        	&lt;DisplayName>Crawford, Gregory Allan&lt;/DisplayName>
         	&lt;Affiliation>
         		&lt;OrgUnit>
         		&lt;/OrgUnit>
         	&lt;/Affiliation>
      	&lt;/Author>
	&lt;/Authors>
   	&lt;Editors>
	&lt;/Editors>
    &lt;Publishers>
        &lt;Publisher>
            &lt;DisplayName>Massachusetts Institute of Technology&lt;/DisplayName>
            &lt;OrgUnit />
        &lt;/Publisher>
    &lt;/Publishers>
    &lt;License>http://dspace.mit.edu/handle/1721.1/7582&lt;/License>
    &lt;Keyword>Mechanical Engineering.&lt;/Keyword>
   	&lt;Abstract>Electrical Discharge Machining (EDM) is an advanced machining process that removes material via thermal erosion through a plasma arc. The machining process is accomplished through the application of high frequency current (typically through a fine wire or some other electrode) to a conductive workpiece. The electrode is physically separated from the workpiece by some small distance and the potential difference is commonly discharged through an insulating dielectric material such as deionized water or oil. This short duration application of current produces a spark across the gap between the electrode and workpiece, causing vaporization and melting of local material in both the electrode and workpiece. The EDM process is most frequently used for conductive substrates (i.e. metals); however, research has shown that the process may be successfully used on semiconductor substrates such as doped silicon wafers&amp;apos;. The purpose of this research was to characterize the EDM process using Design of Experiments (DOE) statistical methodology on highly doped silicon wafer workpieces for material removal rate (MRR) and surface roughness (Ra) for both Wire EDM (WEDM) and die sinker EDM machines. Once process characterization was completed, confirmation testing was conducted for each machine. The applied spark energy had a significant impact on processing speed for both machines as expected, with the WEDM processing also heavily dependent on selected control speed. Surface roughness was also found to be highly dependent on spark energy for both machines. Evaluation of minimum obtainable feature sizes for some specific geometries as well as evaluation of various effects on the processing of silicon were also conducted.&lt;/Abstract>
	&lt;Access xmlns="http://purl.org/coar/access_right" 
    >
    &lt;/Access>
&lt;/Publication>
</dim:field>
</dim:dim>
</metadata></record></GetRecord></OAI-PMH>