<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-09-21T16:00:33Z</responseDate><request verb="GetRecord" identifier="oai:dspace.mit.edu:1721.1/75656" metadataPrefix="dim">https://dspace.mit.edu/server/oai/request</request><GetRecord><record><header><identifier>oai:dspace.mit.edu:1721.1/75656</identifier><datestamp>2022-01-13T07:54:29Z</datestamp><setSpec>com_1721.1_7582</setSpec><setSpec>com_1721.1_7581</setSpec><setSpec>col_1721.1_131023</setSpec></header><metadata><dim:dim xmlns:dim="http://www.dspace.org/xmlns/dspace/dim" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.dspace.org/xmlns/dspace/dim http://www.dspace.org/schema/dim.xsd">
   <dim:field mdschema="dc" element="contributor" qualifier="advisor" lang="en_US">Jing Kong.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="author" lang="en_US">Fang, Wenjing, Ph. D. Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="other" lang="en_US">Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="contributor" qualifier="department">Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="accessioned">2012-12-13T18:49:45Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="available">2012-12-13T18:49:45Z</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="copyright" lang="en_US">2012</dim:field>
   <dim:field mdschema="dc" element="date" qualifier="issued" lang="en_US">2012</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="uri">http://hdl.handle.net/1721.1/75656</dim:field>
   <dim:field mdschema="dc" element="identifier" qualifier="oclc" lang="en_US">818359166</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Cataloged from PDF version of thesis.</dim:field>
   <dim:field mdschema="dc" element="description" lang="en_US">Includes bibliographical references (p. 49-51).</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="abstract" lang="en_US">Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="statementofresponsibility" lang="en_US">by Wenjing Fang.</dim:field>
   <dim:field mdschema="dc" element="description" qualifier="degree" lang="en_US">S.M.</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="extent" lang="en_US">51 p.</dim:field>
   <dim:field mdschema="dc" element="language" qualifier="iso" lang="en_US">eng</dim:field>
   <dim:field mdschema="dc" element="publisher" lang="en_US">Massachusetts Institute of Technology</dim:field>
   <dim:field mdschema="dc" element="rights" lang="en_US">M.I.T. theses are protected by &#xd;
copyright. They may be viewed from this source for any purpose, but &#xd;
reproduction or distribution in any format is prohibited without written &#xd;
permission. See provided URL for inquiries about permission.</dim:field>
   <dim:field mdschema="dc" element="rights" qualifier="uri" lang="en_US">http://dspace.mit.edu/handle/1721.1/7582</dim:field>
   <dim:field mdschema="dc" element="subject" lang="en_US">Electrical Engineering and Computer Science.</dim:field>
   <dim:field mdschema="dc" element="title" lang="en_US">Bilayer graphene growth by low pressure chemical vapor deposition on copper foil</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Bilayer graphene growth by LPCVD on copper foil</dim:field>
   <dim:field mdschema="dc" element="title" qualifier="alternative" lang="en_US">Bilayer graphene growth using coronene</dim:field>
   <dim:field mdschema="dc" element="type" lang="en_US">Thesis</dim:field>
   <dim:field mdschema="dc" element="format" qualifier="mimetype">application/pdf</dim:field>
   <dim:field mdschema="dspace" element="authorsordered">false</dim:field>
   <dim:field mdschema="dspace" element="entity" qualifier="type">Publication</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="others" element="access-status">unknown</dim:field>
   <dim:field mdschema="cerif" element="openaire" authority="" confidence="-1">&lt;Publication xmlns="https://www.openaire.eu/cerif-profile/1.1/" id="0f629cf2-73bc-4a5b-8593-fb0d9a65e5f1">
	&lt;Type xmlns="https://www.openaire.eu/cerif-profile/vocab/COAR_Publication_Types">http://purl.org/coar/resource_type/c_1843&lt;/Type>
	&lt;Language>eng&lt;/Language>
   	&lt;Title>Bilayer graphene growth by low pressure chemical vapor deposition on copper foil&lt;/Title>
   	&lt;Subtitle>Bilayer graphene growth by LPCVD on copper foil&lt;/Subtitle>
   	&lt;Subtitle>Bilayer graphene growth using coronene&lt;/Subtitle>
   	&lt;PublishedIn>
    	&lt;Publication>
      	&lt;/Publication>
   	&lt;/PublishedIn>
   	&lt;PublicationDate>2012&lt;/PublicationDate>
   	&lt;Authors>
      	&lt;Author>
        	&lt;DisplayName>Fang, Wenjing, Ph. D. Massachusetts Institute of Technology&lt;/DisplayName>
         	&lt;Affiliation>
         		&lt;OrgUnit>
         		&lt;/OrgUnit>
         	&lt;/Affiliation>
      	&lt;/Author>
	&lt;/Authors>
   	&lt;Editors>
	&lt;/Editors>
    &lt;Publishers>
        &lt;Publisher>
            &lt;DisplayName>Massachusetts Institute of Technology&lt;/DisplayName>
            &lt;OrgUnit />
        &lt;/Publisher>
    &lt;/Publishers>
    &lt;License>http://dspace.mit.edu/handle/1721.1/7582&lt;/License>
    &lt;Keyword>Electrical Engineering and Computer Science.&lt;/Keyword>
   	&lt;Abstract>Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.&lt;/Abstract>
	&lt;Access xmlns="http://purl.org/coar/access_right" 
    >
    &lt;/Access>
&lt;/Publication>
</dim:field>
</dim:dim>
</metadata></record></GetRecord></OAI-PMH>